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NRVTS12120MFST3G

Onsemi

NRVTS12120MFST3G by Onsemi

NRVTS12120MFST3G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 12A output current, and 0.83V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 150 °C. The diode has a max reverse current of 75uA and is AEC-Q101 compliant for automotive use.

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Digiode

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Cyclops Electronics Ltd

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Microchip USA

USA . 2,334 parts In-Stock

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AZTECH Wire

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iodParts Technologies Inc.

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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Overview

Unleash the power of efficiency with the NRVTS12120MFST3G by Onsemi. This high-quality Schottky rectifier diode offers a maximum output current of 12A and a maximum repetitive peak reverse voltage of 120V, making it ideal for a wide range of applications where performance and reliability are key. With Onsemi's renowned reputation for excellence in manufacturing, you can trust that this diode will deliver exceptional results every time. Upgrade your electronic projects with the NRVTS12120MFST3G and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and heat resistant material ensures the diode is reliable in various environmental conditions.

Config: SINGLE

Simplifies circuit design and installation, making it easier to integrate into projects.

Surface Mount: YES

Allows for easy and space-efficient placement on circuit boards.

Maximum Reverse Current: 75 uA

Low reverse current ensures minimal power loss and heat generation.

Package Shape: RECTANGULAR

Efficient use of space and easy to fit in standard layouts.

No. of Terminals: 5

Provides multiple connection points for versatile applications.

Package Style (Meter): SMALL OUTLINE

Compact size suitable for small electronic devices.

Application: EFFICIENCY

Designed for optimum efficiency in power conversion applications.

Maximum Operating Temperature: 150 °C

High operating temperature range for reliable performance in demanding conditions.

Minimum Operating Temperature: -55 °C

Operational even in very low temperature environments.

Terminal Finish: Matte Tin (Sn) - annealed

Corrosion-resistant finish for long-term reliability.

Terminal Position: DUAL

Versatile terminal positioning for different circuit layouts.

Case Connection: CATHODE

Clearly marked terminal for ease of installation.

Reference Standard: AEC-Q101

Compliance with industry standards for quality and reliability.

Diode Type: RECTIFIER DIODE

Suitable for converting AC to DC with low forward voltage drop.

Maximum Forward Voltage (VF): 0.83 V

Low voltage drop for efficient power conversion.

Maximum Output Current: 12 A

Capable of handling high current loads for various applications.

Technology: SCHOTTKY

Fast switching speed and low forward voltage drop for high efficiency.

Terminal Form: FLAT

Easy to solder and ensure secure connections.

Maximum Repetitive Peak Reverse Voltage: 120 V

Suitable for applications requiring high reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 200 A

Capable of handling surge currents for enhanced protection.

Diode Element Material: SILICON

Reliable and durable material for the diode element.

Technical Specifications

Diodes & Rectifiers NRVTS12120MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.83 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

75 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS12120MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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