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NRVB1240MFST3G

Onsemi

NRVB1240MFST3G by Onsemi

NRVB1240MFST3G by Onsemi is a Schottky rectifier diode with 40V reverse voltage, 12A output current, and 0.68V forward voltage. It operates b/w -55 to 150 °C and has a max reverse current of 500 uA. Ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Component Stockers USA

USA . 10,633 parts In-Stock

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AZTECH Wire

Italy . 320 parts In-Stock

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Kulean Microsystems

USA . 7,956 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 4,497 parts In-Stock

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Problanco Electronics

Mexico . 3,728 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 938 parts In-Stock

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Overview

Discover the power of efficiency with the NRVB1240MFST3G by Onsemi. As a leading manufacturer in diodes & rectifiers, Onsemi delivers top-quality products that exceed expectations. Ideal for various applications, this SCHOTTKY rectifier diode offers a maximum output current of 12A and a maximum repetitive peak reverse voltage of 40V. Experience the benefits of reliable performance, high durability, and seamless integration with Onsemi's NRVB1240MFST3G. Upgrade your projects today and unlock new possibilities with this innovative technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and helps in protecting the diode from external elements, ensuring durability and reliability.

Config: SINGLE

Simplifies circuit design and installation, making it easier to incorporate into various electronic applications.

Surface Mount: YES

Enables easy and efficient placement on PCBs, saving space and facilitating automated manufacturing processes.

Maximum Reverse Current: 500 uA

Low reverse current ensures minimal power loss and enhances overall efficiency of the diode.

Package Shape: RECTANGULAR

Helps in easy mounting and alignment on PCBs, enhancing convenience during assembly and maintenance.

Application: EFFICIENCY

Designed for applications where high efficiency and reliable performance are critical factors.

Maximum Operating Temperature: 150 °C

Can operate in a wide temperature range, suitable for demanding environments and varying conditions.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, improving overall performance and reducing power losses.

Maximum Output Current: 12 A

Capable of handling high current levels, making it suitable for power applications where robustness is required.

Maximum Repetitive Peak Reverse Voltage: 40 V

Provides ample voltage protection and ensures reliable operation within specified voltage limits.

Technical Specifications

Diodes & Rectifiers NRVB1240MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

500 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVB1240MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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