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NRVB8H100MFST3G

Onsemi

NRVB8H100MFST3G by Onsemi

NRVB8H100MFST3G by Onsemi is a Schottky rectifier diode with a max reverse current of 2uA and forward voltage of 0.9V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max output current of 8A and peak reverse voltage of 100V, it is ideal for various electronic circuits.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 1,401 parts In-Stock

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AZTECH Wire

Italy . 659 parts In-Stock

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TANS Electronics

Latvia . 8,390 parts In-Stock

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Problanco Electronics

Mexico . 4,444 parts In-Stock

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Kulean Microsystems

USA . 4,345 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

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Corphita

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Overview

Experience the superior quality and reliability of Onsemi with the NRVB8H100MFST3G Diode & Rectifier. This high-performance component offers unmatched efficiency and a maximum output current of 8A, making it perfect for a wide range of applications. With a maximum reverse voltage of 100V and a Schottky technology design, this rectifier diode provides exceptional value and performance. Trust in Onsemi to deliver top-notch products that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the diode lightweight and durable, ideal for a variety of applications.

Config: SINGLE

Single configuration makes it easy to use and integrate into circuits, reducing complexity and enhancing efficiency.

Surface Mount: YES

Being surface mountable allows for easy installation on printed circuit boards, saving space and enabling high-density designs.

Maximum Reverse Current: 2 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, making it suitable for applications where space is limited.

No. of Terminals: 5

Having 5 terminals allows for versatile connection options, accommodating various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB while maintaining high performance.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where energy conservation is key.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the diode can withstand demanding environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows the diode to operate reliably in both high and low-temperature environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and installation.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures correct polarity.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature helps prevent damage to the diode during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability makes the diode suitable for lead-free soldering processes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures the diode meets automotive-grade quality and reliability requirements.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC power, making it ideal for various electrical circuits.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop minimizes power loss and improves overall efficiency of the diode.

Maximum Output Current: 8 A

High maximum output current rating allows the diode to handle heavy loads without overheating.

Technology: SCHOTTKY

Schottky technology enables fast switching speeds and low forward voltage drop, improving overall performance.

Terminal Form: FLAT

Flat terminal form simplifies soldering and ensures secure connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage rating provides protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 75 A

High maximum non-repetitive peak forward current rating allows the diode to handle temporary high current surges.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and performance, making the diode suitable for various applications.

Technical Specifications

Diodes & Rectifiers NRVB8H100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVB8H100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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