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NRVB830MFST1G

Onsemi

NRVB830MFST1G by Onsemi

NRVB830MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max reverse current of 200uA. It operates b/w -40 to 150°C, ideal for efficiency applications. This single-configured diode has a package style of small outline, suitable for surface mount assembly.

Median Price

$0.353

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

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$0.353

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450

$0.353

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Vyrian

USA . 7,369 parts In-Stock

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7,369

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Digiode

USA . 1,972 parts In-Stock

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1,972

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Distributors (Availability)

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Corohmni

South Africa . 260 parts In-Stock

1+ parts

$0.339

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260

$0.339

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Continental Prestige Electronics

USA . 3,920 parts In-Stock

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$0.353

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$0.346

3,920

$0.353

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$0.346

Argo Parts USA

USA . 1,267 parts In-Stock

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$0.353

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$0.342

1,267

$0.353

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$0.342

Ampacity Inc.

Singapore . 671 parts In-Stock

1+ parts

$3.010

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671

$3.010

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AZTECH Wire

Italy . 535 parts In-Stock

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$10.732

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535

$10.732

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Kulean Microsystems

USA . 7,890 parts In-Stock

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7,890

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Problanco Electronics

Mexico . 5,892 parts In-Stock

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SupplyDigital Components

Austria . 3,891 parts In-Stock

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TANS Electronics

Latvia . 2,242 parts In-Stock

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Corphita

USA . 1,627 parts In-Stock

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1,627

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UHIMA Technologies

Türkiye . 864 parts In-Stock

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864

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Netroflash

USA . 500 parts In-Stock

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$0.346

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$0.335

10k+ parts

$0.328

500

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$0.346

$0.335

$0.328

Overview

Unlock the power of efficiency with the NRVB830MFST1G by Onsemi. This high-quality SCHOTTKY RECTIFIER DIODE offers reliable performance in a small outline package, making it ideal for a wide range of applications. With a maximum output current of 8A and maximum reverse voltage of 30V, this diode provides unmatched value and benefits to customers looking for top-notch quality and performance. Trust in Onsemi's expertise in diodes and rectifiers to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Configuration: SINGLE

Simplified design and installation process for straightforward applications.

Surface Mount: YES

Easier and more efficient mounting on circuit boards.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient performance and minimal power loss.

Package Shape: RECTANGULAR

Provides a compact form factor for space-saving designs.

No. of Terminals: 5

Offers flexibility in connection options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for smaller electronic devices.

Application: EFFICIENCY

Designed for high efficiency applications, ensuring optimal performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a range of environments.

Minimum Operating Temperature: -40 °C

Able to operate in low temperature conditions without issues.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures a secure and reliable electrical connection.

Terminal Position: DUAL

Improved connectivity options for versatile circuit designs.

Case Connection: CATHODE

Simplified circuit connection with clear polarity indication.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow time to prevent damage during soldering process.

Peak Reflow Temperature °C: 260

Allows for efficient soldering without overheating the diode.

Reference Standard: AEC-Q101

Meets automotive industry standards for reliability and performance.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring precise functionality.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop for efficient power conversion.

Maximum Output Current: 8 A

Capable of handling high current loads for various applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop.

Terminal Form: FLAT

Easy to solder and secure connection for stable circuit operation.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suited for applications requiring moderate reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 150 A

Can handle short-duration high current surges without damage.

Diode Element Material: SILICON

Silicon material provides reliable and consistent performance over time.

Technical Specifications

Diodes & Rectifiers NRVB830MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVB830MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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