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TMS45169-70DZ

Texas Instruments

TMS45169-70DZ by Texas Instruments

TMS45169-70DZ by Texas Instruments is a 256Kx16 EDO DRAM with 70ns access time, 512 refresh cycles, and 3-STATE output. It operates at a voltage of 5V and has a max standby current of 0.001A. Commonly used in commercial applications requiring high-speed memory solutions.

Median Price

$5.200

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 331 parts In-Stock

1+ parts

-

100+ parts

$4.160

1k+ parts

$3.720

10k+ parts

$3.500

331

-

$4.160

$3.720

$3.500

DigiKey

USA . 331 parts In-Stock

1+ parts

-

100+ parts

$5.480

1k+ parts

-

10k+ parts

-

331

-

$5.480

-

-

Verical

USA . 331 parts In-Stock

1+ parts

-

100+ parts

$5.200

1k+ parts

$4.650

10k+ parts

$4.375

331

-

$5.200

$4.650

$4.375

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,346 parts In-Stock

1+ parts

$4.398

100+ parts

-

1k+ parts

-

10k+ parts

-

3,346

$4.398

-

-

-

Vyrian

USA . 2,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,576

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,565 parts In-Stock

1+ parts

$4.167

100+ parts

-

1k+ parts

-

10k+ parts

-

3,565

$4.167

-

-

-

Parana Technologies

USA . 831 parts In-Stock

1+ parts

$4.897

100+ parts

-

1k+ parts

$5.428

10k+ parts

-

831

$4.897

-

$5.428

-

DigiPath Technology Company

USA . 244 parts In-Stock

1+ parts

$5.392

100+ parts

$4.961

1k+ parts

-

10k+ parts

-

244

$5.392

$4.961

-

-

ChromeModa Solutions

Germany . 1,884 parts In-Stock

1+ parts

$5.502

100+ parts

$4.512

1k+ parts

-

10k+ parts

-

1,884

$5.502

$4.512

-

-

IDEA Electronic Components Group

UK . 853 parts In-Stock

1+ parts

$5.502

100+ parts

-

1k+ parts

$4.952

10k+ parts

-

853

$5.502

-

$4.952

-

Overview

Upgrade your electronic devices with the TMS45169-70DZ by Texas Instruments! Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology in the DRAM category. This versatile product is perfect for a wide range of applications, offering customers value, efficiency, and superior performance. With a self-refresh feature, common input/output type, and small outline package style, this memory IC type EDO DRAM is sure to meet all your electronic needs. Experience the benefits of Texas Instruments with the TMS45169-70DZ today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and enabling automated assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard voltage requirements in many electronic devices, ensuring easy integration.

Organization: 256KX16

Offers a high memory organization that can handle large amounts of data efficiently.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, making it energy-efficient and fast.

Memory IC Type: EDO DRAM

Features EDO DRAM technology for improved performance, making it suitable for applications requiring fast data access.

Technical Specifications

DRAM TMS45169-70DZ attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J40

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ40,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

512

Self Refresh:

YES

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

160 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS45169-70DZ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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