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TMS320DM335CZCE216

Texas Instruments

TMS320DM335CZCE216 by Texas Instruments

TMS320DM335CZCE216 by Texas Instruments is a 32-bit microprocessor with 8192 RAM words. Operating at 1.3-3.3V, it has a peak reflow temp of 260°C and operates b/w 0-85°C. Ideal for applications requiring a low-profile, fine-pitch grid array package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,198 parts In-Stock

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5,198

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Digiode

USA . 4,285 parts In-Stock

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4,285

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Distributors (Availability)

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AZTECH Wire

Italy . 885 parts In-Stock

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$5.919

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885

$5.919

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One Stop Electronics

USA . 1,376 parts In-Stock

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$19.000

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1,376

$19.000

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Parana Technologies

USA . 1,829 parts In-Stock

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$55.856

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1,829

$55.856

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DigiPath Technology Company

USA . 2,323 parts In-Stock

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$61.504

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2,323

$61.504

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ChromeModa Solutions

Germany . 4,518 parts In-Stock

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$62.759

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$51.462

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4,518

$62.759

$51.462

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IDEA Electronic Components Group

UK . 1,464 parts In-Stock

1+ parts

$62.759

100+ parts

$59.621

1k+ parts

$56.483

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1,464

$62.759

$59.621

$56.483

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Corohmni

South Africa . 5,053 parts In-Stock

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$67.717

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$67.717

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Microchip USA

USA . 1,133 parts In-Stock

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$73.010

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$71.750

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$71.110

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$70.480

1,133

$73.010

$71.750

$71.110

$70.480

Corphita

USA . 4,384 parts In-Stock

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Overview

Unlock the power of innovation with the TMS320DM335CZCE216 by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments delivers cutting-edge solutions for a wide range of applications. The TMS320DM335CZCE216 offers unparalleled performance and reliability, making it the perfect choice for your next project. With its advanced features and high-quality design, this product provides exceptional value and benefits to customers looking to stay ahead in today's fast-paced technology landscape. Experience the advantages of Texas Instruments and take your designs to the next level with the TMS320DM335CZCE216.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, providing good protection for the integrated circuits inside.

Maximum Supply Voltage: 1.365 V

With a maximum supply voltage of 1.365 V, this product is compatible with a wide range of power sources, making it versatile for various applications.

Bit Size: 32

A bit size of 32 means this product can handle complex data processing tasks effectively, making it suitable for high-performance applications.

Power Supplies (V): 1.3,1.8,3.3

Support for multiple power supply voltages (1.3V, 1.8V, 3.3V) allows flexibility in design and compatibility with different power sources.

Maximum Operating Temperature: 85 °C

The product can operate efficiently at high temperatures up to 85°C, ensuring reliable performance in various environmental conditions.

RAM Words: 8192

With a RAM capacity of 8192 words, this product can store and process a large amount of data efficiently, ideal for memory-intensive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable for long-term use.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs TMS320DM335CZCE216 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bit Size:

32

Format:

FIXED POINT

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

13 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

337

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

Maximum Seated Height:

1.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Peripheral IC Type:

Trade Compliance

TMS320DM335CZCE216 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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