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TMS320DM355DZCE27J

Texas Instruments

TMS320DM355DZCE27J by Texas Instruments

TMS320DM355DZCE27J by Texas Instruments is a 32-bit microprocessor with 8192 RAM words. Operating at 1.3V, it has a max supply voltage of 1.365V and supports power supplies of 1.8V and 3.3V. Ideal for applications requiring a low-profile grid array package style, such as embedded systems and digital signal processing tasks in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,838 parts In-Stock

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Digiode

USA . 3,579 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 724 parts In-Stock

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$17.050

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724

$17.050

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One Stop Electronics

USA . 606 parts In-Stock

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$25.000

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606

$25.000

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Corohmni

South Africa . 2,112 parts In-Stock

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$34.874

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$34.874

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Parana Technologies

USA . 1,108 parts In-Stock

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$38.175

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DigiPath Technology Company

USA . 1,253 parts In-Stock

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$42.035

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$38.672

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1,253

$42.035

$38.672

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ChromeModa Solutions

Germany . 5,593 parts In-Stock

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$42.893

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$35.172

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5,593

$42.893

$35.172

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IDEA Electronic Components Group

UK . 2,232 parts In-Stock

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$42.893

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$40.748

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$38.604

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2,232

$42.893

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$38.604

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Component Stockers USA

USA . 509 parts In-Stock

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$99.990

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509

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Corphita

USA . 2,738 parts In-Stock

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Microchip USA

USA . 1,495 parts In-Stock

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Overview

Experience unmatched performance and reliability with the Texas Instruments TMS320DM355DZCE27J. As a leader in the industry, Texas Instruments ensures top-notch quality and innovation in their products. This versatile microprocessor circuit offers a wide range of applications, providing customers with endless possibilities for their projects. With a focus on value and efficiency, this product delivers exceptional benefits, making it a must-have for anyone looking to take their designs to the next level. Trust Texas Instruments to bring you cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Maximum Supply Voltage: 1.365 V

Efficient power consumption and compatibility with low voltage systems.

Package Shape: SQUARE

Uniform size and shape for easier integration into electronic circuits.

Bit Size: 32

High processing capability for handling complex tasks and calculations.

Power Supplies (V): 1.3,1.8,3.3

Versatile voltage options for compatibility with different power sources.

No. of Terminals: 337

Sufficient connection points for interfacing with various components and peripherals.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Multiple packaging options for flexibility in design and installation.

Minimum Supply Voltage: 1.235 V

Stable performance even at low power input levels.

Maximum Operating Temperature: 85 °C

Reliability in high-temperature environments without compromising performance.

Minimum Operating Temperature: 0 °C

Suitable for operation in a wide range of temperature conditions.

Terminal Finish: TIN SILVER COPPER

Corrosion-resistant finish for long-lasting connections and reliability.

Terminal Position: BOTTOM

Efficient PCB layout and space utilization for compact designs.

Maximum Seated Height: 1.3 mm

Low-profile design for slim electronic devices and space-constrained applications.

RAM Words: 8192

Sufficient memory capacity for storing and processing data efficiently.

Width: 13 mm

Compact size for easy integration into various electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

Efficient reflow soldering process for quick and reliable assembly.

Peak Reflow Temperature °C: 260

High-temperature tolerance for robust soldering and rework processes.

Length: 13 mm

Uniform dimensions for consistent layout and assembly in electronic circuits.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Advanced functionality for handling various input/output tasks and communications.

Technology: CMOS

Low power consumption and high-speed performance for efficient operation.

Terminal Form: BALL

Reliable and durable connection points for interfacing with external components.

Nominal Supply Voltage: 1.3 V

Stable and optimal voltage for consistent performance and efficiency.

Terminal Pitch: 0.65 mm

Fine pitch spacing for compact layout and high-density interconnections.

Format: FIXED POINT

Precise calculations and processing for accurate results in various applications.

Moisture Sensitivity Level (MSL): 3

Suitable for standard handling and reflow procedures during manufacturing.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs TMS320DM355DZCE27J attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 1.8V AND 3.3V SUPPLY FOR I/O

Bit Size:

32

Format:

FIXED POINT

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

13 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

337

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

Maximum Seated Height:

1.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Peripheral IC Type:

Trade Compliance

TMS320DM355DZCE27J Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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