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DRA788BSGABFRQ1

Texas Instruments

DRA788BSGABFRQ1 by Texas Instruments

The Texas Instruments DRA788BSGABFRQ1 is a MICROPROCESSOR CIRCUIT with 32-bit External Data Bus Width and 32 MHz Clock Frequency. Ideal for automotive applications, it operates b/w -40 to 125 °C with AEC-Q100 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,093 parts In-Stock

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Digiode

USA . 3,077 parts In-Stock

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3,077

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Distributors (Availability)

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AZTECH Wire

Italy . 431 parts In-Stock

1+ parts

$18.649

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431

$18.649

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One Stop Electronics

USA . 727 parts In-Stock

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$29.000

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727

$29.000

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Parana Technologies

USA . 2,240 parts In-Stock

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$60.356

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$60.356

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DigiPath Technology Company

USA . 1,160 parts In-Stock

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$66.460

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1,160

$66.460

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ChromeModa Solutions

Germany . 4,655 parts In-Stock

1+ parts

$67.816

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$55.609

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4,655

$67.816

$55.609

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IDEA Electronic Components Group

UK . 403 parts In-Stock

1+ parts

$67.816

100+ parts

$64.425

1k+ parts

$61.034

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403

$67.816

$64.425

$61.034

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Corohmni

South Africa . 233 parts In-Stock

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$77.698

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233

$77.698

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Corphita

USA . 4,642 parts In-Stock

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Northwest PG Solutions

USA . 1,180 parts In-Stock

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Microchip USA

USA . 1,131 parts In-Stock

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Native Components

USA . 121 parts In-Stock

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Overview

Elevate your automotive electronics with the DRA788BSGABFRQ1 from Texas Instruments, a leading manufacturer known for top-quality products. This MICROPROCESSOR CIRCUIT offers unparalleled performance in a compact GRID ARRAY, FINE PITCH package, perfect for a variety of applications. With a wide operating temperature range and high clock frequency, this IC is ideal for demanding environments. Experience the reliability and innovation that Texas Instruments brings to the table with this cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the components inside, ensuring durability and reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort.

Maximum Supply Voltage: 1.11 V

Provides flexibility in power supply options, accommodating a range of voltage inputs.

Screening Level: AEC-Q100

Ensures high reliability and quality standards required for automotive applications.

Package Shape: SQUARE

Efficient use of space on a circuit board, allowing for compact and streamlined designs.

No. of Terminals: 367

Offers a high level of connectivity options for interfacing with other devices or components.

Package Style (Meter): GRID ARRAY, FINE PITCH

Enables high-density mounting, making it suitable for complex and compact electronic systems.

Minimum Supply Voltage: 1.02 V

Allows for operation in low power conditions, optimizing energy efficiency.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments or under heavy loads.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely cold conditions, making it suitable for various applications.

Terminal Finish: TIN SILVER COPPER

Provides a durable and reliable surface finish for the terminals, enhancing conductivity and longevity.

Terminal Position: BOTTOM

Facilitates easy and efficient board layout and assembly, improving overall design simplicity.

Maximum Seated Height: 2.82 mm

Allows for a low-profile installation, suitable for applications where space is limited.

Width: 15 mm

Compact size for easy integration into various electronic systems or devices.

External Data Bus Width: 32

Supports high-speed data transfer and processing capabilities, enabling efficient operation.

Maximum Clock Frequency: 32 MHz

Provides fast processing speeds for quick and responsive performance.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper reflow soldering process for reliable and secure connections during assembly.

Peak Reflow Temperature °C: 250

Suitable for high-temperature soldering processes, ensuring proper bonding of components.

Length: 15 mm

Compact size for space-saving designs and easy integration in various applications.

Temperature Grade: AUTOMOTIVE

Designed to meet the rigorous requirements and standards for automotive applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Features advanced integration and processing capabilities, suitable for a wide range of functions.

Technology: CMOS

Utilizes low power consumption and offers high noise immunity, ensuring efficient and reliable performance.

Terminal Form: BALL

Provides a reliable and secure connection for smooth operation and longevity.

Nominal Supply Voltage: 1.06 V

Optimal voltage level for stable and efficient operation across various conditions.

Bus Compatibility: I2C(2), SPI(4), UART(3)

Supports multiple communication protocols, enabling seamless integration with various devices.

Terminal Pitch: 0.65 mm

Fine pitch for high-density mounting, allowing for compact and efficient designs.

Moisture Sensitivity Level (MSL): 3

Designed to withstand moderate levels of moisture exposure, ensuring reliability in various environments.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA788BSGABFRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

I2C(2), SPI(4), UART(3),

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA167,22X22,26

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA788BSGABFRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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