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DRA787BRGABFQ1

Texas Instruments

DRA787BRGABFQ1 by Texas Instruments

DRA787BRGABFQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 367 terminals in a GRID ARRAY package. It operates at -40 to 125 °C, with a max clock frequency of 32 MHz. Ideal for automotive applications requiring CAN, I2C, SPI, and UART compatibility.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,200 parts In-Stock

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Digiode

USA . 1,669 parts In-Stock

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1,669

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Distributors (Availability)

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Native Components

USA . 325 parts In-Stock

1+ parts

$0.267

100+ parts

-

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$0.256

325

$0.267

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$0.256

Northwest PG Solutions

USA . 1,383 parts In-Stock

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$0.293

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-

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$0.259

1,383

$0.293

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$0.259

One Stop Electronics

USA . 505 parts In-Stock

1+ parts

$15.000

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505

$15.000

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Corohmni

South Africa . 139 parts In-Stock

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$15.932

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139

$15.932

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AZTECH Wire

Italy . 855 parts In-Stock

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$16.196

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855

$16.196

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Parana Technologies

USA . 1,519 parts In-Stock

1+ parts

$27.756

100+ parts

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$39.684

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1,519

$27.756

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$39.684

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DigiPath Technology Company

USA . 1,253 parts In-Stock

1+ parts

$30.563

100+ parts

$28.118

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$30.563

$28.118

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ChromeModa Solutions

Germany . 3,984 parts In-Stock

1+ parts

$31.187

100+ parts

$25.573

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3,984

$31.187

$25.573

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IDEA Electronic Components Group

UK . 464 parts In-Stock

1+ parts

$31.187

100+ parts

$29.628

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$28.068

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464

$31.187

$29.628

$28.068

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Corphita

USA . 3,062 parts In-Stock

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Microchip USA

USA . 1,497 parts In-Stock

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Overview

Experience exceptional quality and reliability with the DRA787BRGABFQ1 by Texas Instruments, a leading manufacturer in the industry. This innovative product falls under the category of Other Function uPs,uCs & Peripheral ICs, offering a wide range of applications for various electronic devices. With a maximum supply voltage of 1.11 V and a maximum operating temperature of 125°C, this product is designed to deliver outstanding performance. Trust Texas Instruments to provide cutting-edge technology and superior products that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Supply Voltage: 1.11 V

Provides stable power to the device within safe limits.

Screening Level: AEC-Q100

Meets automotive quality standards for reliability and performance.

Package Shape: SQUARE

Helps with compact and efficient design of the device.

No. of Terminals: 367

Allows for multiple connections and versatility in use.

Package Style (Meter): GRID ARRAY

Facilitates easy soldering and connections on circuit boards.

Minimum Supply Voltage: 1.02 V

Ensures stable operation even at lower voltage levels.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for automotive applications.

Minimum Operating Temperature: -40 °C

Operates in extreme cold conditions as well, enhancing versatility.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for terminals.

Terminal Position: BOTTOM

Facilitates easy connections and soldering on circuit boards.

Maximum Seated Height: 2.82 mm

Compact size allows for efficient use of space in the device.

Width: 15 mm

Compact width allows for versatility in placement on circuit boards.

External Data Bus Width: 48

Wide data bus width allows for efficient data transfer and processing.

Maximum Clock Frequency: 32 MHz

High clock frequency enables fast processing speeds.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient time for reflow soldering without damaging the components.

Peak Reflow Temperature °C: 250

Withstands high temperatures during soldering process.

Length: 15 mm

Compact length allows for efficient placement on circuit boards.

Temperature Grade: AUTOMOTIVE

Designed to operate reliably in automotive environments.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Integrates essential microprocessor functions for efficient operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Terminal Form: BALL

Ball terminals provide secure connections on circuit boards.

Nominal Supply Voltage: 1.06 V

Optimal voltage level for stable and efficient operation.

Bus Compatibility: CAN; I2C; SPI; UART

Supports various communication protocols for versatile connectivity.

Terminal Pitch: 0.65 mm

Fine pitch allows for compact design and efficient connections.

Moisture Sensitivity Level (MSL): 3

Resistant to moisture damage, ensuring longevity of the device.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA787BRGABFQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; SPI; UART

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

48

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA787BRGABFQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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