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DRA781BRGABFRQ1

Texas Instruments

DRA781BRGABFRQ1 by Texas Instruments

The Texas Instruments DRA781BRGABFRQ1 is a MICROPROCESSOR CIRCUIT with 367 terminals in a GRID ARRAY package. It operates at -40 to 125 °C, with a max clock frequency of 32 MHz. Ideal for automotive applications requiring CAN, I2C, SPI, and UART compatibility.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,490 parts In-Stock

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3,490

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Vyrian

USA . 3,442 parts In-Stock

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3,442

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Distributors (Availability)

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Native Components

USA . 289 parts In-Stock

1+ parts

$1.295

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289

$1.295

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Northwest PG Solutions

USA . 2,229 parts In-Stock

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$1.424

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2,229

$1.424

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One Stop Electronics

USA . 304 parts In-Stock

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$17.000

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304

$17.000

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AZTECH Wire

Italy . 327 parts In-Stock

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$17.238

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327

$17.238

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Parana Technologies

USA . 344 parts In-Stock

1+ parts

$32.880

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$113.983

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344

$32.880

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$113.983

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DigiPath Technology Company

USA . 906 parts In-Stock

1+ parts

$36.205

100+ parts

$33.309

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906

$36.205

$33.309

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ChromeModa Solutions

Germany . 2,850 parts In-Stock

1+ parts

$36.944

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$30.294

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2,850

$36.944

$30.294

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IDEA Electronic Components Group

UK . 580 parts In-Stock

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$36.944

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$35.097

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$33.250

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580

$36.944

$35.097

$33.250

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Corohmni

South Africa . 1,034 parts In-Stock

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$68.539

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1,034

$68.539

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Corphita

USA . 4,276 parts In-Stock

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Microchip USA

USA . 1,998 parts In-Stock

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Overview

Experience the next level of performance with the DRA781BRGABFRQ1 by Texas Instruments. Renowned for their superior quality and innovation, Texas Instruments brings you a cutting-edge solution in the category of Other Function uPs,uCs & Peripheral ICs. Ideal for automotive applications, this product offers unmatched reliability and efficiency. With advanced features like CAN, I2C, SPI, and UART compatibility, customers can enjoy seamless integration and enhanced functionality. Elevate your projects with the value and benefits that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Surface Mount: YES

Allows for easy and secure mounting on a printed circuit board, saving space and simplifying assembly.

Maximum Supply Voltage: 1.11 V

Operating within a safe voltage range ensures the longevity and stability of the product.

Package Shape: SQUARE

The square shape helps in efficient space utilization on the board layout, contributing to better overall design.

Maximum Operating Temperature: 125 °C

Capable of functioning in high-temperature environments, making it suitable for automotive applications.

Terminal Finish: TIN SILVER COPPER

This finish provides good conductivity and corrosion resistance, ensuring reliable connections.

External Data Bus Width: 48

A wider data bus allows for faster data transfer and processing, enhancing the product's performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving energy efficiency and signal integrity.

Nominal Supply Voltage: 1.06 V

Having a consistent supply voltage helps in maintaining stable operation and performance of the product.

Bus Compatibility: CAN; I2C; SPI; UART

Support for multiple bus protocols enables flexibility and compatibility with different communication interfaces.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA781BRGABFRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; SPI; UART

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

48

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA781BRGABFRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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