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PCFG50T65SQF

Onsemi

PCFG50T65SQF by Onsemi

The Onsemi PCFG50T65SQF is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. Ideal for power control applications, it operates b/w -40 °C to 175°C, making it suitable for high-temperature environments. This SQUARE-shaped transistor has a surface-mount configuration with no lead terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,175 parts In-Stock

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Digiode

USA . 1,582 parts In-Stock

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1,582

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Ampacity Inc.

Singapore . 1,086 parts In-Stock

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$59.050

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$59.050

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Problanco Electronics

Mexico . 5,122 parts In-Stock

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SupplyDigital Components

Austria . 3,357 parts In-Stock

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TANS Electronics

Latvia . 3,048 parts In-Stock

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3,048

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Kulean Microsystems

USA . 1,522 parts In-Stock

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Corphita

USA . 1,177 parts In-Stock

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UHIMA Technologies

Türkiye . 937 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Experience superior performance and reliability with the PCFG50T65SQF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Insulated Gate Bipolar Transistors (IGBT) that are perfect for power control applications. With its N-CHANNEL polarity, SINGLE configuration, and surface mount capability, this transistor offers unbeatable value and benefits to customers. Trust Onsemi to provide you with cutting-edge technology that exceeds your expectations. Elevate your projects with the PCFG50T65SQF and unlock endless possibilities.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are preferred for high power applications as they offer lower conduction losses and higher efficiency compared to P-CHANNEL IGBTs.

Configuration: SINGLE

Single configuration IGBTs are easier to control and integrate in power control systems, making them a versatile choice for various applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient performance in managing power flow in circuits.

Surface Mount: YES

Surface mount IGBTs are easy to mount and solder on circuit boards, providing a compact and efficient solution for electronic designs.

Maximum VCEsat: 2.1 V

Low VCEsat reduces on-state voltage drop, leading to lower power dissipation and higher efficiency in power control applications.

Package Shape: SQUARE

Square packages are easy to mount and provide uniform current distribution, ensuring reliable performance in power control circuits.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and control of the IGBT in power circuits, making it easier to integrate and operate.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this IGBT can withstand high-temperature environments and ensure stable performance in demanding conditions.

Maximum Collector-Emitter Voltage: 650 V

High collector-emitter voltage rating allows the IGBT to handle high voltage levels in power control applications, enhancing its versatility and reliability.

Maximum Gate-Emitter Voltage: 20 V

The high gate-emitter voltage rating provides robust gate control and ensures reliable switching operation in power control circuits.

Minimum Operating Temperature: -40 °C

With a wide temperature range, this IGBT can operate in extreme cold conditions, making it suitable for a variety of industrial and automotive applications.

Maximum Gate-Emitter Threshold Voltage: 6.4 V

Having a specific gate-emitter threshold voltage ensures precise gate control and reliable switching characteristics in power control applications.

Terminal Position: UPPER

Upper terminal position simplifies the layout and connection of the IGBT in circuit designs, facilitating ease of installation and maintenance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) PCFG50T65SQF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

S-XUUC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.1 V

Trade Compliance

PCFG50T65SQF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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