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PCFG75T65LQF

Onsemi

PCFG75T65LQF by Onsemi

PCFG75T65LQF by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.5V and IC of 150A, ideal for POWER CONTROL applications. It has a toff of 1100ns, ton of 120ns, and can operate b/w -55 °C to 175°C.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

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SupplyDigital Components

Austria . 5,983 parts In-Stock

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TANS Electronics

Latvia . 4,698 parts In-Stock

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Corphita

USA . 1,537 parts In-Stock

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Kulean Microsystems

USA . 1,247 parts In-Stock

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Problanco Electronics

Mexico . 1,215 parts In-Stock

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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Corohmni

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Overview

Experience the power of innovation with the PCFG75T65LQF by Onsemi, a top-tier manufacturer in the industry. This N-CHANNEL Insulated Gate Bipolar Transistor (IGBT) offers exceptional performance and reliability in power control applications. With a maximum VCEsat of 1.5V and a maximum Collector-Emitter Voltage of 650V, this transistor ensures efficient power management. Its compact rectangular design with no lead terminal form makes it ideal for surface mount applications. Trust Onsemi's expertise and elevate your projects with the PCFG75T65LQF, providing unmatched value and benefits to customers seeking high-quality components.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SINGLE

Single configurations simplify circuit design and reduce complexity, making this IGBT easier to integrate into power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers high performance and reliability in controlling power flow.

Surface Mount: YES

Surface mount packaging allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum VCEsat: 1.5 V

Low VCEsat minimizes power loss and improves overall efficiency in power control systems.

Package Shape: RECTANGULAR

Rectangular packages offer better heat dissipation and thermal management, ensuring the IGBT operates at optimal temperatures.

Nominal Turn Off Time (toff): 1100 ns

Fast turn-off time enables precise control of power switching, reducing switching losses and improving system performance.

No. of Terminals: 3

Having 3 terminals simplifies connection and ensures proper configuration in power control circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the IGBT to withstand harsh environments and maintain operation under extreme conditions.

Maximum Collector-Emitter Voltage: 650 V

High VCE voltage rating enables the IGBT to handle higher voltages and power levels in power control applications.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability, ensuring stable performance in power control circuits.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating provides robustness and protection against voltage spikes or transients in power control applications.

Minimum Operating Temperature: -55 °C

Wide temperature range allows the IGBT to operate in cold environments without compromising performance or reliability.

Maximum Collector Current (IC): 150 A

High collector current rating enables the IGBT to handle large current outputs in power control applications.

Maximum Gate-Emitter Threshold Voltage: 6.4 V

Low gate-emitter threshold voltage ensures efficient gate control and quick response times in power control circuits.

Terminal Position: UPPER

Upper terminal positioning simplifies layout design and connections, making installation and maintenance easier in power control systems.

Nominal Turn On Time (ton): 120 ns

Fast turn-on time allows for rapid power switching and precise control in power control applications, improving overall system efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) PCFG75T65LQF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUUC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1100 ns

Nominal Turn On Time (ton):

120 ns

Maximum VCEsat:

1.5 V

Trade Compliance

PCFG75T65LQF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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