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PCFG60T65SQF

Onsemi

PCFG60T65SQF by Onsemi

PCFG60T65SQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 2.1V and a max VGE of 20V, it operates b/w -40 °C to 175°C. This SQUARE-shaped chip has a max VCE of 650V, making it suitable for high-power systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,160 parts In-Stock

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Digiode

USA . 263 parts In-Stock

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Kulean Microsystems

USA . 7,652 parts In-Stock

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Problanco Electronics

Mexico . 4,223 parts In-Stock

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TANS Electronics

Latvia . 4,119 parts In-Stock

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SupplyDigital Components

Austria . 3,306 parts In-Stock

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Corphita

USA . 1,229 parts In-Stock

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Corohmni

South Africa . 318 parts In-Stock

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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Overview

Experience the power of innovation with the PCFG60T65SQF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. This N-CHANNEL transistor is a game-changer in power control applications, offering unparalleled performance and reliability. With a maximum VCEsat of 2.1V and a maximum collector-emitter voltage of 650V, this product ensures optimal efficiency in any surface mount application. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations. Elevate your projects with the PCFG60T65SQF and unlock endless possibilities.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SINGLE

Single configuration IGBTs are simpler to use and require less circuitry, making them a cost-effective choice for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability in controlling high power levels.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates minimal energy loss and efficient operation, making this IGBT suitable for high power applications.

Maximum Collector-Emitter Voltage: 650 V

High maximum VCE voltage allows for usage in applications with higher voltage requirements, providing greater flexibility.

Maximum Operating Temperature: 175 °C

With a high operating temperature limit, this IGBT can withstand demanding environmental conditions without compromising performance.

Transistor Element Material: SILICON

Silicon-based IGBTs offer high reliability, low conduction losses, and excellent thermal stability, ensuring long-term performance.

Maximum Gate-Emitter Voltage: 20 V

High maximum gate-emitter voltage allows for precise control of the IGBT, ensuring stable and accurate power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) PCFG60T65SQF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

S-XUUC-N

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.1 V

Trade Compliance

PCFG60T65SQF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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