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PCFG75T65SQF

Onsemi

PCFG75T65SQF by Onsemi

Onsemi's PCFG75T65SQF is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 2.1V and 650V max Collector-Emitter Voltage, it operates b/w -40 °C to 175°C. This SQUARE-shaped chip has a Surface Mount design with 20V Gate-Emitter Voltage and 6.4V Gate-Emitter Threshold Voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,390 parts In-Stock

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Digiode

USA . 424 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.510

100+ parts

$1.374

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$1.238

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40

$1.510

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$1.238

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Problanco Electronics

Mexico . 3,790 parts In-Stock

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Kulean Microsystems

USA . 2,148 parts In-Stock

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Corphita

USA . 1,957 parts In-Stock

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TANS Electronics

Latvia . 1,946 parts In-Stock

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SupplyDigital Components

Austria . 1,386 parts In-Stock

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1,386

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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Corohmni

South Africa . 312 parts In-Stock

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Overview

Discover the power and precision of the PCFG75T65SQF by Onsemi, a top-quality Insulated Gate Bipolar Transistor designed for optimal power control applications. With a maximum VCEsat of 2.1V and a maximum Collector-Emitter Voltage of 650V, this N-CHANNEL transistor offers unparalleled performance and reliability. Whether you're in the automotive industry, renewable energy sector, or industrial automation field, the PCFG75T65SQF is the ideal choice for your power control needs. Trust in Onsemi's reputation for excellence and unlock the full potential of your applications with this cutting-edge technology.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower conduction losses and higher efficiency compared to P-CHANNEL IGBTs, making them a preferable choice for power control applications.

Configuration: SINGLE

Single configuration simplifies the design and implementation of power control circuits, making the product easier to use for various applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling power output.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter terminals, leading to reduced power dissipation and improved efficiency.

Surface Mount: YES

Surface mount capability enables easy and compact integration of the IGBT into electronic circuits, ideal for space-constrained applications.

Maximum Collector-Emitter Voltage: 650 V

High collector-emitter voltage rating allows the IGBT to handle high power levels without breakdown, making it suitable for demanding power control tasks.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage tolerance ensures reliable and stable operation of the IGBT in power control circuits, providing enhanced performance and durability.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows the IGBT to withstand elevated temperatures, ensuring reliable operation under various thermal conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) PCFG75T65SQF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

S-XUUC-N

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.1 V

Trade Compliance

PCFG75T65SQF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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