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PCFG25T120SQF

Onsemi

PCFG25T120SQF by Onsemi

PCFG25T120SQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 1.95V, Max VGE of 20V, and Max VCE of 1200V. With a temperature range from -55 °C to 175°C, this SINGLE configuration transistor is ideal for high-power electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,519 parts In-Stock

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Digiode

USA . 775 parts In-Stock

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Kulean Microsystems

USA . 7,093 parts In-Stock

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7,093

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Problanco Electronics

Mexico . 6,081 parts In-Stock

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TANS Electronics

Latvia . 2,792 parts In-Stock

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SupplyDigital Components

Austria . 1,999 parts In-Stock

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Corphita

USA . 1,925 parts In-Stock

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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948

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Corohmni

South Africa . 387 parts In-Stock

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Overview

Unleash the power of innovation with the PCFG25T120SQF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. This N-CHANNEL transistor offers single configuration and is designed for power control applications. With a maximum VCEsat of 1.95V and a maximum Collector-Emitter Voltage of 1200V, this product ensures optimal performance and efficiency. Say goodbye to limitations and hello to endless possibilities with the PCFG25T120SQF by Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SINGLE

A single configuration simplifies the circuit design and reduces component count, leading to cost savings.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient operation.

Maximum VCEsat: 1.95 V

Low VCEsat minimizes power dissipation and improves overall efficiency of the device.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various electronic systems.

Terminal Form: NO LEAD

No lead terminals simplify the PCB layout and reduce parasitic capacitance for enhanced performance.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers flexibility in mounting options and can be easily integrated in different applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance over a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 1200 V

High collector-emitter voltage rating allows for handling high-power applications without breakdown.

Transistor Element Material: SILICON

Silicon material provides high performance, reliability, and efficiency in power control applications.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating ensures robust gate control and reliable operation in power control circuits.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in harsh environments with extreme temperatures.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Gate-emitter threshold voltage ensures proper turn-on and turn-off of the IGBT, preventing malfunction and improving efficiency.

Terminal Position: UPPER

Upper terminal position facilitates easier connection and integration in the circuit layout, improving overall reliability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) PCFG25T120SQF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUUC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

1.95 V

Trade Compliance

PCFG25T120SQF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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