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PCFG40T120SQF

Onsemi

PCFG40T120SQF by Onsemi

The Onsemi PCFG40T120SQF is an N-CHANNEL IGBT with 1200V VCEsat, 20V VGE, and 175 °C max temp. Ideal for power control applications, it's a single-configured transistor in a surface-mount rectangular package without leads.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,238 parts In-Stock

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Digiode

USA . 244 parts In-Stock

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SupplyDigital Components

Austria . 7,539 parts In-Stock

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7,539

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TANS Electronics

Latvia . 6,250 parts In-Stock

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Problanco Electronics

Mexico . 5,349 parts In-Stock

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Corphita

USA . 1,620 parts In-Stock

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Kulean Microsystems

USA . 356 parts In-Stock

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Corohmni

South Africa . 219 parts In-Stock

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UHIMA Technologies

Türkiye . 104 parts In-Stock

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Overview

Unleash the power of your electronic devices with the PCFG40T120SQF by Onsemi. As a leader in the industry, Onsemi guarantees top-notch quality and reliability in every product they create, and this insulated gate bipolar transistor is no exception. Ideal for power control applications, this N-channel single configuration transistor offers unparalleled performance and efficiency. Say goodbye to overheating and hello to seamless operation with a maximum collector-emitter voltage of 1200V and a maximum VCEsat of 1.95V. Upgrade your devices today and experience the difference with Onsemi's PCFG40T120SQF.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SINGLE

Single configuration IGBTs are simpler to use and integrate, making them suitable for a wide range of power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability in power management systems.

Maximum VCEsat: 1.95 V

Low VCEsat voltage results in reduced power losses and increased efficiency in power conversion applications.

Surface Mount: YES

Surface mount technology allows for easy integration onto PCBs and saves space, making it suitable for compact applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in challenging environments and extended durability.

Maximum Collector-Emitter Voltage: 1200 V

High collector-emitter voltage rating makes it suitable for high voltage applications and ensures device safety and longevity.

Maximum Gate-Emitter Voltage: 20 V

Having a high gate-emitter voltage rating provides better control and stability in power control applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the device to operate in a wide range of temperatures, extending its usability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) PCFG40T120SQF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUUC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

1.95 V

Trade Compliance

PCFG40T120SQF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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