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NOIX2SN9400B-LTI

Onsemi

NOIX2SN9400B-LTI by Onsemi

NOIX2SN9400B-LTI by Onsemi is an image sensor with 3.2x3.2 um pixel size, 32.4 MHz master clock, and 3072 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 68 dB. Ideal for applications requiring high-resolution imaging at fast frame rates like surveillance systems or industrial cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 175 parts In-Stock

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USA . 175 parts In-Stock

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Vyrian

USA . 7,824 parts In-Stock

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Flip Electronics

USA . 175 parts In-Stock

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Digiode

USA . 53 parts In-Stock

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Kulean Microsystems

USA . 6,802 parts In-Stock

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Problanco Electronics

Mexico . 5,893 parts In-Stock

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TANS Electronics

Latvia . 4,640 parts In-Stock

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SupplyDigital Components

Austria . 2,053 parts In-Stock

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Corphita

USA . 906 parts In-Stock

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Corohmni

South Africa . 365 parts In-Stock

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Overview

Elevate your imaging experience with the NOIX2SN9400B-LTI by Onsemi. Crafted by a trusted manufacturer, this high-quality image sensor offers unparalleled precision and performance. Ideal for a wide range of applications, this sensor provides exceptional value and benefits to customers seeking top-notch image quality. Whether you're capturing stunning visuals or enhancing security systems, this product delivers superior results that will exceed your expectations. Experience the difference with the NOIX2SN9400B-LTI – where excellence meets innovation.

Feature Benefit Bullets

Pixel Size (um) 3.2X3.2

Small pixel size allows for high resolution imaging and detailed output.

Maximum Supply Voltage 1.3 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock 32.4 MHz

High master clock frequency enables fast data processing and capture.

Body Width 19.9 inch

Compact design for easy integration and space-saving in applications.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor technology for high-quality image capture and low power consumption.

Body Height 2.54 mm

Low profile design for flexibility in mounting and space-constrained environments.

Package Shape or Style RECTANGULAR

Standard rectangular package shape for easy compatibility and installation.

Minimum Supply Voltage 1.1 V

Low minimum supply voltage for energy efficiency and power savings.

Maximum Operating Temperature 85 °C

Wide temperature range for versatile use in various environments.

Horizontal Pixel 3072

High horizontal pixel count for detailed and sharp image output.

Output Range 0.4-1.5V

Wide output voltage range for flexible signal processing and compatibility.

Output Type DIGITAL VOLTAGE

Digital voltage output for convenient interfacing with other digital systems.

Minimum Operating Temperature -40 °C

Low minimum operating temperature for reliable performance in extreme cold conditions.

Maximum Operating Current 240 mA

Reasonable operating current for efficient power usage and longer battery life.

Housing CERAMIC, METAL-SEALED COFIRED

Durable and secure housing materials for robust protection and longevity.

Dynamic Range 68 dB

High dynamic range for capturing a wide range of light intensities accurately.

Vertical Pixel 3072

High vertical pixel count for detailed and high-resolution image output.

Body Length/Diameter 20.88 mm

Compact body length/diameter for easy integration and space-saving in designs.

Spectral Response (nm) 300-1000

Wide spectral response range for capturing a broad spectrum of colors and light.

Optical Format (inch) 1/1.2

Standard optical format for compatibility with various lenses and optical systems.

Termination Type SOLDER

Secure solder termination for reliable electrical connections.

Output Interface Type I2C/SPI INTERFACE

Versatile output interface options for easy integration with different systems.

Frame Rate 56 fps

High frame rate for smooth and real-time imaging and video capture.

Array Type FRAME

Frame array type for organized and efficient image capturing and processing.

Mounting Feature SURFACE MOUNT

Surface mountable for easy and secure mounting on PCBs and other surfaces.

Technical Specifications

Image Sensors NOIX2SN9400B-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

56 fps

Horizontal Pixel:

3072

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.2

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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