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NOIP3SN5000A-QTI

Onsemi

NOIP3SN5000A-QTI by Onsemi

NOIP3SN5000A-QTI by Onsemi features 4.8x4.8 um pixel size, 360 MHz master clock, and 2592 horizontal pixels. Ideal for image sensing applications with a frame rate of 45 fps, spectral response of 400-1000 nm, and sensitivity of 7.5 V/lx.s.

Median Price

$171.380

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 210 parts In-Stock

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$162.200

100+ parts

$152.470

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$142.740

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210

$162.200

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$142.740

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DigiKey

USA . 39 parts In-Stock

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$171.380

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Verical

USA . 126 parts In-Stock

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$190.588

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$178.425

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126

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$190.588

$178.425

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Distributors (In-Stock)

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Digiode

USA . 232 parts In-Stock

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$161.034

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232

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Freelance Electronics

USA . 33 parts In-Stock

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$450.000

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$472.500

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$445.500

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33

$450.000

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$445.500

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Vyrian

USA . 1,934 parts In-Stock

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Flip Electronics

USA . 84 parts In-Stock

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Corphita

USA . 67 parts In-Stock

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$152.559

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67

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Corohmni

South Africa . 155 parts In-Stock

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$169.510

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155

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Kulean Microsystems

USA . 8,294 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 3,565 parts In-Stock

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UHIMA Technologies

Türkiye . 512 parts In-Stock

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512

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Problanco Electronics

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TANS Electronics

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Perfect Parts

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Overview

Experience unmatched quality and performance with the NOIP3SN5000A-QTI image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this sensor offers unparalleled value and benefits to customers looking for top-notch image capturing capabilities. Elevate your projects with the superior advantages and reliability of the NOIP3SN5000A-QTI, setting new standards in image sensor innovation.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

The small pixel size allows for high resolution images to be captured with sharp details.

Maximum Supply Voltage: 1.9 V

Efficient power consumption with a maximum supply voltage of 1.9V.

Master Clock: 360 MHz

High master clock frequency of 360 MHz enables fast data processing and readout.

Body Width: 19 inch

Compact and easily mountable design with a body width of 19 inches.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Utilizes CMOS technology for high quality image sensing and processing.

Package Shape or Style: SQUARE

Square package shape for easy integration and compatibility with various systems.

Minimum Supply Voltage: 1.7 V

Operates efficiently with a low minimum supply voltage of 1.7V.

Maximum Operating Temperature: 85 °C

Suitable for use in a wide range of operating temperatures up to 85°C.

Horizontal Pixel: 2592

High horizontal pixel count of 2592 for detailed and clear image capture.

Minimum Operating Temperature: -40 °C

Can function effectively even in extremely low temperatures down to -40°C.

Dynamic Range: 60 dB

Wide dynamic range of 60 dB ensures accurate capture of both bright and dark areas in an image.

Vertical Pixel: 2048

Vertical pixel count of 2048 for high resolution and well-defined images.

Body Length/Diameter: 19 mm

Compact body length/diameter of 19 mm for easy installation and integration.

Spectral Response (nm): 400-1000

Broad spectral response range from 400 to 1000 nm for versatile imaging capabilities.

Termination Type: SOLDER

Simple and reliable solder termination for easy connectivity.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface type for efficient data transfer and communication.

Frame Rate: 45 fps

High frame rate of 45 fps for smooth and real-time image capture.

Array Type: FRAME

Frame array type for organized and structured image sensing.

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity of 7.5 V/lx.s for accurate and reliable light detection.

Mounting Feature: SURFACE MOUNT

Surface mountable design for easy and secure installation on various surfaces.

Technical Specifications

Image Sensors NOIP3SN5000A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

45 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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