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NOIP1SE016KA-GTI

Onsemi

NOIP1SE016KA-GTI by Onsemi

NOIP1SE016KA-GTI by Onsemi is an Image Sensor with 4.5X4.5 um pixel size, 360 MHz master clock, and 4096x4096 resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for high-speed imaging applications requiring precise color reproduction and low-light performance.

Median Price

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Lifecycle Status

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AZTECH Wire

Italy . 981 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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SupplyDigital Components

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Overview

Enhance your imaging solutions with the NOIP1SE016KA-GTI image sensor by Onsemi. With a reputation for high-quality products, Onsemi delivers cutting-edge technology in the field of image sensors. This sensor's compact design and impressive features make it ideal for a wide range of applications, from security cameras to medical imaging devices. Experience enhanced performance, reliability, and clarity with the NOIP1SE016KA-GTI, setting new standards in image sensor technology. Elevate your projects and capture every detail with this innovative product.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Smaller pixel size allows for higher resolution images with less noise.

Maximum Supply Voltage: 1.9 V

Allows for efficient power consumption and prevents damage due to overvoltage.

Master Clock: 360 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 36.1 inch

Compact body width makes it suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides high sensitivity and low noise for high-quality images.

Body Height: 3.5 mm

Slim body height allows for easy integration into slim devices.

Package Shape or Style: RECTANGULAR

Rectangular shape provides ease of mounting and integration into electronic systems.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage allows for operation in low power scenarios.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures performance in various environments.

Horizontal Pixel: 4096

High horizontal pixel count provides detailed images with excellent clarity.

Minimum Operating Temperature: -40 °C

Operational at low temperatures, making it suitable for extreme conditions.

Dynamic Range: 59 dB

High dynamic range ensures accurate representation of different light levels in an image.

Vertical Pixel: 4096

High vertical pixel count ensures high resolution images with fine details.

Body Length/Diameter: 43.1 mm

Compact body length allows for easy integration into devices with limited space.

Termination Type: SOLDER

Solder termination provides secure connections for reliable operation.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface allows for easy connectivity with other devices.

Frame Rate: 120 fps

High frame rate enables capturing of fast-moving objects with smooth video output.

Array Type: FRAME

Frame array type provides organized pixel arrangement for efficient image capture.

Sensitivity (V/lx.s): 5.8 V/lx.s

High sensitivity allows for efficient detection of light for clear and sharp images.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers secure attachment for stable operation in various environments.

Technical Specifications

Image Sensors NOIP1SE016KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

4096

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

4096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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