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MT9V126IA3XTC-TR

Onsemi

MT9V126IA3XTC-TR by Onsemi

Onsemi's MT9V126IA3XTC-TR is a 5.6x5.6um CMOS image sensor with 680H x 512V pixels, offering a dynamic range of 74.6dB and operating at temperatures from -40 to 105 °C. It features a digital voltage output interface, suitable for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,722 parts In-Stock

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Digiode

USA . 1,760 parts In-Stock

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AZTECH Wire

Italy . 510 parts In-Stock

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$8.040

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510

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Kulean Microsystems

USA . 7,900 parts In-Stock

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SupplyDigital Components

Austria . 6,365 parts In-Stock

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Problanco Electronics

Mexico . 2,754 parts In-Stock

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UHIMA Technologies

Türkiye . 670 parts In-Stock

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Corohmni

South Africa . 488 parts In-Stock

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Corphita

USA . 99 parts In-Stock

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TANS Electronics

Latvia . 12 parts In-Stock

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Overview

Enhance your imaging projects with the MT9V126IA3XTC-TR by Onsemi, a top-quality image sensor designed to deliver exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this sensor offers a wide range of applications in various fields such as automotive, security, and medical imaging. With its advanced features and cutting-edge technology, customers can expect superior image quality, high-speed data transfer, and seamless integration. Experience the value and benefits of this innovative product and take your projects to the next level with the MT9V126IA3XTC-TR.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

Larger pixel size allows for better light sensitivity and increased image quality, making this sensor ideal for capturing detailed images in low light conditions.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage provides flexibility in usage scenarios and ensures stable operation of the image sensor.

Master Clock: 27 MHz

High master clock frequency enables fast processing of image data, resulting in smoother and more real-time image capture.

Body Width: 9 inch

Compact body width makes the image sensor suitable for integration into a variety of devices without taking up too much space.

Power Supplies (V): 1.8

Optimal power supply voltage ensures efficient performance and energy consumption of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensor technology offers low power consumption, high sensitivity, and fast readout speeds, making it a reliable choice for capturing high-quality images.

Package Shape or Style: SQUARE

Square package shape provides ease of mounting and alignment in electronic devices, enhancing the overall design and functionality.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures compatibility with a wide range of power sources and allows for efficient power management.

Maximum Operating Temperature: 105 °C

High maximum operating temperature tolerance enables the image sensor to withstand harsh environmental conditions, making it suitable for a variety of applications.

Horizontal Pixel: 680

High horizontal pixel count allows for detailed image capture with sharpness and clarity, making this sensor ideal for high-resolution imaging.

Output Range: -0.30-2.80V

Wide output range provides flexibility in signal processing and compatibility with different external devices, ensuring accurate image data transmission.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies the signal processing and integration of the image sensor with other digital systems, enhancing overall system compatibility.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature tolerance ensures reliable performance even in extreme cold conditions, making this image sensor suitable for outdoor and industrial applications.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish provides durability and corrosion resistance, ensuring long-term reliability and functionality of the image sensor.

Maximum Operating Current: 50 mA

Low maximum operating current consumption ensures energy efficiency and minimizes power usage, making this sensor suitable for battery-powered devices.

Dynamic Range: 74.6 dB

High dynamic range allows the image sensor to capture a wide range of brightness levels accurately, resulting in vibrant and detailed images with excellent contrast.

Vertical Pixel: 512

High vertical pixel count allows for detailed image capture in the vertical direction, ensuring sharp and clear representation of objects in the image frame.

Body Length/Diameter: 9 mm

Compact body length/diameter enables easy integration of the image sensor into a wide range of devices, making it a versatile choice for various applications.

Optical Format (inch): 1/4

1/4 inch optical format offers a good balance between image sensor size and performance, making it suitable for compact devices with high image quality requirements.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for the image sensor, ensuring stable operation and preventing signal loss or interference.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the connection and communication with external devices, enabling easy integration of the image sensor into a wide range of systems.

Frame Rate: 30 fps

High frame rate allows for smooth and fluid motion capture, making this sensor suitable for applications requiring real-time video recording and analysis.

Array Type: FRAME

Frame array type facilitates the capture of multiple frames in a single image acquisition, enabling enhanced image resolution and dynamic range.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure attachment of the image sensor to the PCB or device, ensuring stable and reliable operation in various applications.

Technical Specifications

Image Sensors MT9V126IA3XTC-TR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

74.6 dB

Frame Rate:

30 fps

Horizontal Pixel:

680

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Power Supplies (V):

1.8

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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