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MT9V024IA7XTR-TP

Onsemi

MT9V024IA7XTR-TP by Onsemi

MT9V024IA7XTR-TP by Onsemi is an image sensor with 6x6 um pixel size, 27 MHz master clock, and 752 horizontal pixels. It is ideal for applications requiring a digital voltage output interface, such as frame arrays in cameras or surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,555 parts In-Stock

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5,555

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Flip Electronics

USA . 2,000 parts In-Stock

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2,000

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Digiode

USA . 558 parts In-Stock

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558

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Distributors (Availability)

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AZTECH Wire

Italy . 769 parts In-Stock

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$18.000

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769

$18.000

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Kulean Microsystems

USA . 8,235 parts In-Stock

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Problanco Electronics

Mexico . 7,916 parts In-Stock

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SupplyDigital Components

Austria . 5,769 parts In-Stock

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TANS Electronics

Latvia . 4,058 parts In-Stock

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Corphita

USA . 1,165 parts In-Stock

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UHIMA Technologies

Türkiye . 381 parts In-Stock

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Corohmni

South Africa . 326 parts In-Stock

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Overview

Discover the cutting-edge MT9V024IA7XTR-TP Image Sensor by Onsemi, a trusted manufacturer known for its high-quality products. Ideal for a wide range of applications, this sensor offers exceptional value and benefits to customers looking for superior image capture capabilities. With advanced features and reliable performance, this sensor provides unmatched accuracy and clarity in imaging tasks, making it the perfect solution for your imaging needs. Unlock endless possibilities with the MT9V024IA7XTR-TP Image Sensor and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um) - 6X6

Smaller pixel size allows for higher resolution images and better low-light performance.

Maximum Supply Voltage - 3.6 V

Higher supply voltage allows for efficient power usage and better performance.

Master Clock - 27 MHz

High master clock frequency enables fast data readout and processing.

Body Width - 9 inch

Compact body width makes it suitable for various applications requiring space-saving designs.

Sensors or Transducers Type - IMAGE SENSOR,CMOS

CMOS technology ensures low power consumption and high image quality.

Body Height - 1.3 mm

Low body height allows for slim device designs and integration into compact systems.

Package Shape or Style - SQUARE

Square package shape provides easy mounting and alignment in circuit boards.

Minimum Supply Voltage - 3 V

Low minimum supply voltage ensures compatibility with a wide range of power sources.

Maximum Operating Temperature - 105 °C

High maximum operating temperature allows for reliable performance in harsh environments.

Horizontal Pixel - 752

Higher number of horizontal pixels results in wider image capture and better details.

Output Range - 0.30-3V

Wide output range enables flexible signal processing and compatibility with different systems.

Output Type - DIGITAL VOLTAGE

Digital voltage output simplifies integration and processing of image data.

Minimum Operating Temperature - -40 °C

Low minimum operating temperature ensures reliable performance in extreme cold conditions.

Terminal Finish - TIN SILVER COPPER

Durable terminal finish ensures long-term reliability and corrosion resistance.

Maximum Operating Current - 60 mA

Low operating current consumption results in efficient power usage and longer battery life.

Dynamic Range - 100 dB

High dynamic range enables capturing detailed images with a wide range of lighting conditions.

Vertical Pixel - 480

Vertical pixels add depth and detail to images, enhancing overall image quality.

Body Length/Diameter - 9 mm

Compact body length allows for easy integration and mounting in small devices.

Optical Format (inch) - 1/3

1/3 inch optical format provides good balance between image quality and sensor size.

Termination Type - SOLDER

Solder termination ensures secure electrical connections and easy integration in circuit boards.

Output Interface Type - 2-WIRE INTERFACE

2-wire interface simplifies communication with external devices and microcontrollers.

Frame Rate - 60 fps

High frame rate allows for smooth and detailed image capture, suitable for fast-moving objects.

Array Type - FRAME

Frame array type enables simultaneous capture of multiple image frames, increasing efficiency.

Mounting Feature - SURFACE MOUNT

Surface mount capability allows for easy and secure mounting on circuit boards for mass production.

Technical Specifications

Image Sensors MT9V024IA7XTR-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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