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KSC2333R

Onsemi

KSC2333R by Onsemi

KSC2333R by Onsemi is a NPN Power BJT with max. VCE of 400V and IC of 2A. Featuring hFE of 20, it's ideal for switching applications in various industries. This transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,086 parts In-Stock

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Digiode

USA . 679 parts In-Stock

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679

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Problanco Electronics

Mexico . 6,954 parts In-Stock

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Kulean Microsystems

USA . 6,318 parts In-Stock

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TANS Electronics

Latvia . 4,503 parts In-Stock

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SupplyDigital Components

Austria . 1,857 parts In-Stock

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Corphita

USA . 1,505 parts In-Stock

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Supply Digital

USA . 1,494 parts In-Stock

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UHIMA Technologies

Türkiye . 693 parts In-Stock

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Corohmni

South Africa . 197 parts In-Stock

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Overview

Looking for a reliable and efficient power transistor? Look no further than the KSC2333R by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers top-quality products that are built to last. The KSC2333R falls under the category of Power Bipolar Junction Transistors, making it ideal for switching applications. Its NPN configuration and high maximum Collector-Emitter Voltage of 400V ensure optimal performance. Trust Onsemi to provide you with a product that not only meets your needs but exceeds your expectations. Choose the KSC2333R for unparalleled value and benefits in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing versatility in various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate into electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for controlling electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering onto circuit boards or mounting onto surfaces.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer reliable connections and easy soldering, ensuring secure integration into circuits.

No. of Terminals: 3

Three terminals provide necessary connections for base, collector, and emitter, enabling proper transistor operation in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting onto surfaces, enhancing stability and heat dissipation.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures reliable amplification and signal control in electronic circuits.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum collector-emitter voltage of 400 V, this transistor can handle higher voltage levels, increasing its versatility in applications.

Transistor Element Material: SILICON

Silicon material provides reliable performance and efficiency, making it a common choice for transistors in various electronic devices.

Maximum Collector Current (IC): 2 A

High maximum collector current of 2 A allows for greater power handling capabilities, making this transistor suitable for medium-power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper alignment during installation, improving overall circuit reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2333R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC2333R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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