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KSC2335-Y

Samsung

KSC2335-Y by Samsung

Samsung's KSC2335-Y is a NPN BJT transistor with 400V VCE, 7A IC, and 40W Pmax. Ideal for switching applications due to its low VCEsat of 1V and fast ton of 1000ns. With hFE of 40, it offers reliable performance in various electronic circuits.

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Digiode

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Nova Conductors

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Corohmni

South Africa . 872 parts In-Stock

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Aztec Data Supply Inc.

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AZTECH Wire

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Ampacity Inc.

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Semicontronic

India . 346 parts In-Stock

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Component Stockers USA

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Problanco Electronics

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Continental Prestige Electronics

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Kulean Microsystems

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Alle Elektronik GmbH

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Corphita

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TANS Electronics

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Overview

Elevate your electronic projects with the Samsung KSC2335-Y Power Bipolar Junction Transistor. Known for its high quality and reliability, Samsung delivers a product that exceeds expectations in the field of switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 7A, this NPN transistor offers superior performance and efficiency. Whether you're a hobbyist or a professional, the KSC2335-Y provides value, benefits, and advantages that will take your projects to the next level. Upgrade to Samsung today and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good physical protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product versatile and easy to integrate.

Configuration: SINGLE

Simplifies circuit design and component layout, making it suitable for various applications.

Transistor Application: SWITCHING

Designed for fast switching applications, ensuring efficient performance in electronic circuits.

Maximum VCEsat: 1 V

Low VCEsat ensures minimal power loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

Easy to handle and mount on circuit boards, facilitating assembly and maintenance.

Terminal Form: THROUGH-HOLE

Simplifies soldering and connection processes, ensuring secure and reliable connections.

No. of Terminals: 3

Simple 3-terminal connection setup, making it user-friendly and suitable for various circuit designs.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation, enhancing the overall reliability of the product.

Maximum Power Dissipation Ambient: 40 W

Capable of dissipating high power levels, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 40

Good current gain ensures reliable and stable amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring reliable operation under varying conditions.

Maximum Collector-Emitter Voltage: 400 V

High VCE voltage rating provides flexibility in circuit design and protects against voltage spikes.

Transistor Element Material: SILICON

Silicon-based construction ensures high performance and reliability in electronic circuits.

Maximum Turn On Time (ton): 1000 ns

Fast turn-on time ensures quick response and efficient switching in electronic applications.

Maximum Collector Current (IC): 7 A

High collector current rating allows for handling of large currents, making it suitable for power applications.

Maximum Turn Off Time (toff): 3500 ns

Fast turn-off time ensures efficient operation and minimal switching losses in electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it user-friendly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2335-Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Samsung

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

40 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3500 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

1 V

Trade Compliance

KSC2335-Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Samsung

Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.

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