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KSC2333Y

Onsemi

KSC2333Y by Onsemi

KSC2333Y by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 2A. It has a min DC current gain of 40, ideal for switching applications in various electronic circuits due to its single configuration and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,616 parts In-Stock

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Vyrian

USA . 536 parts In-Stock

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536

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GreenTree Electronics

Israel . 36,000 parts In-Stock

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36,000

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TANS Electronics

Latvia . 7,458 parts In-Stock

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Problanco Electronics

Mexico . 3,693 parts In-Stock

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Corphita

USA . 2,136 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 1,740 parts In-Stock

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SupplyDigital Components

Austria . 756 parts In-Stock

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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Kulean Microsystems

USA . 624 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Overview

Elevate your power management solutions with the KSC2333Y by Onsemi. Designed and crafted with precision, this NPN Power Bipolar Junction Transistor offers unparalleled quality and reliability. Perfect for switching applications, this transistor provides a seamless performance that exceeds expectations. With a maximum collector-emitter voltage of 400V and a maximum collector current of 2A, this transistor is the ideal choice for your power needs. Explore the endless possibilities and experience the efficiency and value that the KSC2333Y brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components within, ensuring reliability and safety.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, offering high efficiency and reliability.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with and reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency in these scenarios.

Package Shape: RECTANGULAR

Compact and space-efficient design, suitable for various electronic applications where space is a constraint.

Terminal Form: THROUGH-HOLE

Allows for easy and secure soldering onto a PCB, ensuring reliability and stability in the connection.

No. of Terminals: 3

Simple and straightforward connection layout, making it easy to integrate into circuits.

Package Style (Meter): FLANGE MOUNT

Enables secure and stable mounting onto a surface or PCB, ensuring the transistor stays in place during operation.

Minimum DC Current Gain (hFE): 40

Provides sufficient gain for various applications, ensuring consistent and reliable performance.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltage levels, suitable for applications where higher voltages are required.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronic circuits.

Maximum Collector Current (IC): 2 A

Capable of handling relatively high currents, suitable for a wide range of applications that require current switching.

Terminal Position: SINGLE

Simplifies the connection process, ensuring a secure and reliable connection for optimal performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2333Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC2333Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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