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KSC2073H2TSTU

Onsemi

KSC2073H2TSTU by Onsemi

KSC2073H2TSTU by Onsemi is a NPN Power BJT with 150V VCEO, 1.5A IC, and 25W Ptot. Ideal for amplifier applications, it has hFE of 40, fT of 4MHz, and operates up to 150 °C. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,404 parts In-Stock

1+ parts

$0.200

100+ parts

$0.200

1k+ parts

$0.190

10k+ parts

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4,404

$0.200

$0.200

$0.190

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Distributors (In-Stock)

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Vyrian

USA . 2,489 parts In-Stock

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2,489

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Digiode

USA . 268 parts In-Stock

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268

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Perfect Parts

USA . 40,304 parts In-Stock

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40,304

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QUARKTWIN TECHNOLOGY LTD

USA . 18,063 parts In-Stock

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18,063

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TANS Electronics

Latvia . 7,251 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,805 parts In-Stock

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SupplyDigital Components

Austria . 4,936 parts In-Stock

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4,936

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Problanco Electronics

Mexico . 4,278 parts In-Stock

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Kulean Microsystems

USA . 4,070 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,870 parts In-Stock

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Corphita

USA . 2,615 parts In-Stock

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2,615

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 703 parts In-Stock

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703

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Supply Digital

USA . 610 parts In-Stock

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610

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Corohmni

South Africa . 290 parts In-Stock

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290

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Overview

Power up your projects with the KSC2073H2TSTU by Onsemi! This high-quality NPN Power BJT transistor is perfect for amplifier applications, offering a maximum power dissipation of 25W and a maximum collector-emitter voltage of 150V. With a minimum DC current gain of 40 and a nominal transition frequency of 4 MHz, this transistor delivers superior performance and reliability. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and elevate your designs with the KSC2073H2TSTU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with single transistor configuration, making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation (Abs): 25 W

Can handle a high power dissipation, making it suitable for applications requiring high power output.

Maximum Collector-Emitter Voltage: 150 V

Allows for operation in circuits with higher voltage requirements, providing flexibility in circuit design.

Maximum Collector Current (IC): 1.5 A

Capable of handling a higher collector current, suitable for applications where higher current is required.

Nominal Transition Frequency (fT): 4 MHz

Provides high frequency operation, making it suitable for applications where fast switching speeds are needed.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2073H2TSTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC2073H2TSTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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