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KSC2258A

Onsemi

KSC2258A by Onsemi

KSC2258A by Onsemi is a NPN BJT transistor with max VCEsat of 1.2V, hFE of 40, and max IC of 0.1A. Ideal for amplifier applications, it has a max operating temp of 150 °C and max collector-emitter voltage of 300V. The package style is flange mount with rectangular shape and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,904 parts In-Stock

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Vyrian

USA . 622 parts In-Stock

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Kulean Microsystems

USA . 7,432 parts In-Stock

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Problanco Electronics

Mexico . 6,832 parts In-Stock

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TANS Electronics

Latvia . 3,717 parts In-Stock

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Corphita

USA . 1,941 parts In-Stock

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SupplyDigital Components

Austria . 1,818 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 1,613 parts In-Stock

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UHIMA Technologies

Türkiye . 465 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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Overview

Unlock the power of the KSC2258A by Onsemi, a top-quality Power BJT transistor that delivers exceptional performance in amplifier applications. Manufactured by Onsemi, known for their reliability and innovation, this NPN transistor offers customers unparalleled value with its low VCEsat of 1.2V and high power dissipation of 4W. Perfect for a variety of electronic projects, the KSC2258A provides a seamless experience with its through-hole terminals and robust construction. Say goodbye to subpar performance and welcome the advantages of Onsemi's KSC2258A into your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to implement in circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Maximum VCEsat: 1.2 V

Low saturation voltage results in minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Convenient shape for mounting and fitting in circuit layouts.

Terminal Form: THROUGH-HOLE

Easy to solder onto PCBs and provides secure connections.

Maximum Power Dissipation (Abs): 4 W

Can handle high power levels without overheating, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and securing in place for stable operation.

Minimum DC Current Gain (hFE): 40

Ensures reliable amplification of signals with a minimum gain value.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications with heat generation.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance reduces the chances of signal distortion and improves performance.

Maximum Collector-Emitter Voltage: 300 V

High voltage rating allows for use in a variety of circuits and applications.

Transistor Element Material: SILICON

Reliable and widely used semiconductor material for transistors.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many low to medium power applications.

Terminal Position: SINGLE

Simplified terminal configuration for straightforward connections.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and higher frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2258A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

4 W

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.2 V

Trade Compliance

KSC2258A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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