Loading...

KSC2334O

Onsemi

KSC2334O by Onsemi

KSC2334O by Onsemi is a NPN Power BJT with VCEsat of 0.6V, IC of 7A, and hFE of 70. Ideal for switching applications, it has a max power dissipation of 40W and operates up to 150 °C. With a package style of FLANGE MOUNT, it offers fast switching times for efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,534

-

-

-

-

Vyrian

USA . 1,299 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,299

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 7,577 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,577

-

-

-

-

Corphita

USA . 3,417 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,417

-

-

-

-

Problanco Electronics

Mexico . 3,088 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,088

-

-

-

-

Supply Digital

USA . 1,691 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,691

-

-

-

-

Kulean Microsystems

USA . 1,526 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,526

-

-

-

-

SupplyDigital Components

Austria . 1,291 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,291

-

-

-

-

UHIMA Technologies

Türkiye . 621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

621

-

-

-

-

Corohmni

South Africa . 54 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

54

-

-

-

-

Overview

Unleash the power of innovation with the KSC2334O by Onsemi, a top-tier manufacturer known for their high-quality Power Bipolar Junction Transistors. Ideal for switching applications, this NPN transistor offers exceptional performance with a maximum VCEsat of just 0.6V and a maximum collector current of 7A. With a robust design and reliable functionality, this transistor guarantees efficiency and precision in every use. Elevate your projects with the KSC2334O and experience the superior value it brings to your electronics endeavors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection to the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and ensures proper signal flow.

Maximum VCEsat: 0.6 V

Low VCEsat results in minimal power loss and high efficiency during operation.

Transistor Application: SWITCHING

Designed for switching applications, providing fast response times and efficient performance.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capacity allows the transistor to handle large loads and operate reliably.

Maximum Collector-Emitter Voltage: 100 V

With a high VCE rating, this transistor can withstand higher voltage levels, increasing its versatility.

Minimum DC Current Gain (hFE): 70

A high DC current gain ensures proper amplification of the input signal, enhancing overall performance.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, suitable for demanding industrial environments.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2334O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

70

Maximum Fall Time (tf):

1500 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2000 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.6 V

Trade Compliance

KSC2334O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20