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KSC2333

Onsemi

KSC2333 by Onsemi

KSC2333 by Onsemi is a NPN Power BJT with max. Vce of 400V and max. Ic of 2A, ideal for switching applications. Featuring hFE of min. 10, it comes in a plastic/epoxy package with flange mount style, suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,482 parts In-Stock

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Vyrian

USA . 2,407 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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SupplyDigital Components

Austria . 5,684 parts In-Stock

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Kulean Microsystems

USA . 5,199 parts In-Stock

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TANS Electronics

Latvia . 4,699 parts In-Stock

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Problanco Electronics

Mexico . 4,657 parts In-Stock

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Corphita

USA . 2,814 parts In-Stock

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Supply Digital

USA . 2,022 parts In-Stock

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UHIMA Technologies

Türkiye . 544 parts In-Stock

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Corohmni

South Africa . 194 parts In-Stock

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Overview

Unleash the power of innovation with the KSC2333 by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers unrivaled performance and reliability, making it the go-to choice for all your switching needs. With a maximum collector-emitter voltage of 400V and a maximum collector current of 2A, this NPN transistor is designed to exceed expectations. Whether you're looking to amplify signals or control currents, the KSC2333 delivers exceptional value and benefits that will elevate your projects to new heights. Trust Onsemi's legacy of excellence and experience the advantage of superior technology with the KSC2333.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and reliable, ensuring the transistor will last a long time in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE

A single configuration makes this transistor easy to work with and integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and fitting in tight spaces.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection to circuit boards, reducing the risk of disconnection.

No. of Terminals: 3

Having three terminals allows for easy connection to external components and circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount allows for secure mounting to a surface, ideal for applications where stability is important.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures reliable and consistent performance in amplification applications.

Maximum Collector-Emitter Voltage: 400 V

With a high voltage rating, this transistor can handle higher voltage applications without risk of damage.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this transistor a good choice for various applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle moderate power levels in various applications.

Terminal Position: SINGLE

Having a single terminal position simplifies the connection process and reduces the risk of errors during installation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2333 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC2333 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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