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KSC2335Y

Onsemi

KSC2335Y by Onsemi

KSC2335Y by Onsemi is a NPN BJT transistor with hFE of 40, VCE of 400V, and IC of 7A. Ideal for switching applications, it comes in a plastic/epoxy package with flange mount style and through-hole terminals.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 1,009 parts In-Stock

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Vyrian

USA . 248 parts In-Stock

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Nova Conductors

Japan . 159 parts In-Stock

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Corohmni

South Africa . 872 parts In-Stock

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$1.732

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872

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Aztec Data Supply Inc.

USA . 44,705 parts In-Stock

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$1.760

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$1.760

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AZTECH Wire

Italy . 968 parts In-Stock

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$10.507

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Ampacity Inc.

Singapore . 2,009 parts In-Stock

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$27.050

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Semicontronic

India . 346 parts In-Stock

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$61.050

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$59.524

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$59.218

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Component Stockers USA

USA . 539 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,572 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,324 parts In-Stock

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Continental Prestige Electronics

USA . 5,073 parts In-Stock

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Kulean Microsystems

USA . 4,767 parts In-Stock

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Argo Parts USA

USA . 3,827 parts In-Stock

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SupplyDigital Components

Austria . 3,554 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,549 parts In-Stock

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Supply Digital

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Corphita

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TANS Electronics

Latvia . 1,216 parts In-Stock

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UHIMA Technologies

Türkiye . 837 parts In-Stock

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Bastille Electronics

Australia . 101 parts In-Stock

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Overview

Unleash the power of innovation with the KSC2335Y from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers unparalleled performance with a maximum collector-emitter voltage of 400V and a maximum collector current of 7A. With a minimum DC current gain of 40, the KSC2335Y provides exceptional value and benefits to customers looking for a reliable and efficient solution for their electronic projects. Experience the advantages of Onsemi's cutting-edge technology and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in digital and analog circuits, making this product versatile for different circuit designs.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of currents in electronic circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong physical connections, ensuring stable performance in high-stress environments.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in circuits, offering flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure and stable installation in various electronic devices and equipment.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures proper amplification and signal control in electronic circuits.

Maximum Collector-Emitter Voltage: 400 V

With a maximum voltage rating of 400V, this transistor can handle high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability in electronic circuits, ensuring long-term stability.

Maximum Collector Current (IC): 7 A

A maximum collector current of 7A allows this transistor to handle high current loads, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper alignment during installation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2335Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC2335Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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