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KSC2335O

Onsemi

KSC2335O by Onsemi

KSC2335O by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 7A. With min DC current gain of 30, it's ideal for switching applications in various industries due to its single configuration and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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TANS Electronics

Latvia . 8,224 parts In-Stock

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Kulean Microsystems

USA . 5,886 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 1,286 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 798 parts In-Stock

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Problanco Electronics

Mexico . 526 parts In-Stock

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Corohmni

South Africa . 485 parts In-Stock

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Supply Digital

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Overview

Unleash the power of innovation with the KSC2335O by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and performance like no other. With a maximum collector-emitter voltage of 400V and a maximum collector current of 7A, the KSC2335O is perfect for a wide range of electronic projects. Experience seamless operation and superior efficiency with this versatile component that will take your designs to the next level. Elevate your creations with the KSC2335O and unleash endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and ensures durability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into different electronic systems.

Transistor Application: SWITCHING

Optimized for switching applications, making it efficient and reliable in controlling electrical signals.

Package Shape: RECTANGULAR

Compact and space-saving design for easy installation in different electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto circuit boards and provides secure connections for stable performance.

No. of Terminals: 3

Simple and straightforward terminal connections for easy integration into circuits.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting onto different surfaces, providing stability and reliability in operation.

Minimum DC Current Gain (hFE): 30

Ensures sufficient current gain for proper amplification and signal control in electronic circuits.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltage applications, making it suitable for a wide range of electronic systems.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring consistent operation over time.

Maximum Collector Current (IC): 7 A

Capable of handling high current loads, making it suitable for power applications that require efficient switching and control.

Terminal Position: SINGLE

Simplified terminal layout for easy connection and integration into circuits, reducing complexity in design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2335O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC2335O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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