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KSC2073H2TU

Onsemi

KSC2073H2TU by Onsemi

KSC2073H2TU by Onsemi is a NPN BJT transistor with 150V VCEO, 1.5A IC, and 25W Ptot. Ideal for amplifier applications, it has a min hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.910

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 114 parts In-Stock

1+ parts

$0.612

100+ parts

$0.498

1k+ parts

$0.401

10k+ parts

-

114

$0.612

$0.498

$0.401

-

Mouser Electronics

USA . 406 parts In-Stock

1+ parts

$0.910

100+ parts

$0.608

1k+ parts

$0.472

10k+ parts

$0.428

406

$0.910

$0.608

$0.472

$0.428

Farnell

UK . 799 parts In-Stock

1+ parts

$0.954

100+ parts

$0.456

1k+ parts

$0.380

10k+ parts

-

799

$0.954

$0.456

$0.380

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DigiKey

USA . 290 parts In-Stock

1+ parts

$1.560

100+ parts

$0.658

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-

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290

$1.560

$0.658

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Element14

Singapore . 835 parts In-Stock

1+ parts

$2.120

100+ parts

$1.010

1k+ parts

$0.759

10k+ parts

$0.696

835

$2.120

$1.010

$0.759

$0.696

Rochester

USA . 8,310 parts In-Stock

1+ parts

-

100+ parts

$0.491

1k+ parts

$0.408

10k+ parts

$0.363

8,310

-

$0.491

$0.408

$0.363

Verical

USA . 7,026 parts In-Stock

1+ parts

-

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-

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$0.524

10k+ parts

$0.467

7,026

-

-

$0.524

$0.467

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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3,000

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Digiode

USA . 1,599 parts In-Stock

1+ parts

$0.393

100+ parts

-

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1,599

$0.393

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-

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Vyrian

USA . 2,470 parts In-Stock

1+ parts

$0.414

100+ parts

-

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2,470

$0.414

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Flip Electronics

USA . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,546 parts In-Stock

1+ parts

$0.352

100+ parts

-

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2,546

$0.352

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Corphita

USA . 993 parts In-Stock

1+ parts

$0.373

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993

$0.373

-

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Corohmni

South Africa . 217 parts In-Stock

1+ parts

$0.414

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-

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217

$0.414

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Continental Prestige Electronics

USA . 1,480 parts In-Stock

1+ parts

$0.916

100+ parts

$0.566

1k+ parts

$0.340

10k+ parts

$0.328

1,480

$0.916

$0.566

$0.340

$0.328

Microchip USA

USA . 1,985 parts In-Stock

1+ parts

$6.440

100+ parts

$6.400

1k+ parts

$6.380

10k+ parts

$6.360

1,985

$6.440

$6.400

$6.380

$6.360

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 29,784 parts In-Stock

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29,784

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TANS Electronics

Latvia . 4,865 parts In-Stock

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SupplyDigital Components

Austria . 3,958 parts In-Stock

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Perfect Parts

USA . 3,535 parts In-Stock

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3,535

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Problanco Electronics

Mexico . 3,273 parts In-Stock

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Kulean Microsystems

USA . 3,008 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Supply Digital

USA . 682 parts In-Stock

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UHIMA Technologies

Türkiye . 10 parts In-Stock

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10

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Overview

Looking for a reliable Power Bipolar Junction Transistor (BJT) for your amplifier applications? Look no further than the KSC2073H2TU by Onsemi. With a maximum power dissipation of 25W and a maximum collector-emitter voltage of 150V, this NPN transistor offers high performance and durability. The flange mount package and matte tin terminal finish ensure easy installation and long-term reliability. Trust Onsemi's reputation for quality in every component they manufacture. Upgrade your amplifier with the KSC2073H2TU for optimal performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used type of BJT which allows for easy interfacing with other components in electronic circuits.

Configuration: SINGLE

Simplified setup and operation for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification of electrical signals.

Package Shape: RECTANGULAR

Efficient use of space in circuit design and layout.

Terminal Form: THROUGH-HOLE

Easy to solder and secure connections on a circuit board.

No. of Terminals: 3

Straightforward connections for input and output.

Maximum Power Dissipation (Abs): 25 W

Capability to handle high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting onto a heatsink for improved heat dissipation.

Minimum DC Current Gain (hFE): 40

Ensures stable and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without failure.

Maximum Collector-Emitter Voltage: 150 V

Can handle relatively high voltage levels in a circuit.

Transistor Element Material: SILICON

Provides good electrical properties and reliability for the transistor.

Maximum Collector Current (IC): 1.5 A

Sufficient current capacity for many amplifier applications.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures good conductivity and long-term reliability of the terminals.

Terminal Position: SINGLE

Simplified connectivity for the transistor in a circuit.

Nominal Transition Frequency (fT): 4 MHz

Ability to switch at high frequencies for fast signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2073H2TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC2073H2TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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