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KSC2334

Onsemi

KSC2334 by Onsemi

The Onsemi KSC2334 is a NPN BJT transistor with max VCEsat of 0.6V and max IC of 7A, ideal for switching applications. With a max power dissipation of 40W and operating temp up to 150 °C, it offers reliable performance in various electronic circuits. The through-hole package style and rectangular shape make it easy to mount and integrate into designs.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 3,132 parts In-Stock

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Digiode

USA . 1,623 parts In-Stock

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SupplyDigital Components

Austria . 7,699 parts In-Stock

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TANS Electronics

Latvia . 4,381 parts In-Stock

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S.R.D Solutions

India . 2,500 parts In-Stock

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Kulean Microsystems

USA . 1,546 parts In-Stock

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Corphita

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Supply Digital

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Problanco Electronics

Mexico . 846 parts In-Stock

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Corohmni

South Africa . 333 parts In-Stock

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality KSC2334 Power BJT by Onsemi. Designed for switching applications, this NPN transistor offers a maximum VCEsat of just 0.6V and a maximum collector current of 7A, ensuring efficient performance. With a durable plastic/epoxy package body and flange mount style, this transistor is reliable and easy to integrate. Whether you're a hobbyist or a professional, the KSC2334 provides value, reliability, and versatility for a wide range of applications. Upgrade your designs today with Onsemi's top-notch power BJT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and reliability for the transistor, making it ideal for long-term use in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high input impedance and fast switching speed.

Configuration: SINGLE

Single configuration transistors are easier to work with and simplify circuit design, making them a preferred choice for many applications.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, offering reliable performance and efficient operation in such scenarios.

Maximum VCEsat: 0.6 V

The low saturation voltage of 0.6V ensures minimal power loss and efficient switching operation, making it a highly efficient choice.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and integration into various circuit designs, improving overall versatility.

Terminal Form: THROUGH-HOLE

Through-hole terminals allow for easy and secure soldering onto circuit boards, ensuring a stable connection for reliable operation.

Maximum Fall Time (tf): 1500 ns

The fast fall time of 1500ns indicates quick switching speed, making it suitable for high-frequency applications where rapid switching is required.

No. of Terminals: 3

Having 3 terminals allows for simple and straightforward connections, reducing complexity in circuit layout and assembly.

Maximum Power Dissipation (Abs): 40 W

With a maximum power dissipation of 40W, this transistor can handle high power levels without overheating, ensuring reliable operation under heavy loads.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and easy thermal management, enhancing the overall performance and reliability of the transistor.

Maximum Power Dissipation Ambient: 1.5 W

Even in ambient conditions, this transistor can dissipate up to 1.5W of power without overheating, making it suitable for a wide range of operating environments.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor provides consistent amplification of input signals, ensuring stable and predictable performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in a variety of environments, ensuring the transistor can withstand elevated temperatures without damage.

Maximum Collector-Emitter Voltage: 100 V

A high maximum collector-emitter voltage of 100V provides sufficient headroom for voltage spikes and variations, enhancing the overall reliability and safety of the transistor.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high performance and reliability, making it a suitable choice for this transistor.

Maximum Turn On Time (ton): 500 ns

The fast turn-on time of 500ns ensures quick response to input signals, making it ideal for applications requiring rapid switching and minimal delay.

Maximum Collector Current (IC): 7 A

With a maximum collector current of 7A, this transistor can handle high current loads with ease, making it suitable for power-hungry applications.

Maximum Turn Off Time (toff): 2000 ns

The maximum turn-off time of 2000ns indicates a quick response to signal cutoff, ensuring efficient operation and minimal power loss during switching transitions.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and circuit connection, contributing to overall ease of use and reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2334 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

20

Maximum Fall Time (tf):

1500 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2000 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.6 V

Trade Compliance

KSC2334 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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