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KSC2334R

Onsemi

KSC2334R by Onsemi

KSC2334R by Onsemi is a NPN Power BJT with max VCEsat of 0.6V, IC of 7A, and hFE of 40. Ideal for switching applications due to its fast turn-on time (ton) of 500ns and fall time (tf) of 1500ns. With a max power dissipation of 40W, it operates at temperatures up to 150 °C in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,892 parts In-Stock

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Vyrian

USA . 1,848 parts In-Stock

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SupplyDigital Components

Austria . 8,190 parts In-Stock

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TANS Electronics

Latvia . 7,258 parts In-Stock

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Kulean Microsystems

USA . 6,174 parts In-Stock

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Corphita

USA . 2,855 parts In-Stock

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Supply Digital

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Problanco Electronics

Mexico . 1,503 parts In-Stock

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UHIMA Technologies

Türkiye . 873 parts In-Stock

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Corohmni

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Overview

Enhance your power systems with the high-quality KSC2334R Power Bipolar Junction Transistor from Onsemi. This NPN transistor is designed for switching applications, providing superior performance and reliability. With a maximum collector-emitter voltage of 100V and a maximum collector current of 7A, this transistor offers excellent power dissipation and efficiency. Upgrade your electronics with the KSC2334R and experience enhanced functionality and durability.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type NPN

NPN transistors are commonly used for amplification and switching applications, offering flexibility in circuit design.

Configuration SINGLE

Simplifies circuit design and integration, making it easy to incorporate into electronic devices.

Transistor Application SWITCHING

Designed specifically for switching applications, providing reliable and efficient performance in on/off operations.

Maximum VCEsat 0.6 V

Low saturation voltage helps minimize power loss and improve efficiency in switching operations.

Package Shape RECTANGULAR

Allows for easy mounting and placement on circuit boards or heat sinks, enhancing the overall design.

Terminal Form THROUGH-HOLE

Facilitates easy soldering and connection to circuit boards, ensuring secure and stable electrical connections.

Maximum Fall Time (tf) 1500 ns

Fast fall time enables quick switching transitions, contributing to high-speed performance in switching applications.

No. of Terminals 3

Provides necessary connections for required circuit configurations, offering versatility in circuit design.

Maximum Power Dissipation (Abs) 40 W

High power dissipation capability ensures reliable operation under high load conditions, making it suitable for demanding applications.

Package Style (Meter) FLANGE MOUNT

Flange mount design allows for secure and stable mounting, reducing the risk of damage or failure in industrial environments.

Maximum Power Dissipation Ambient 1.5 W

Efficient thermal management ensures reliable performance even in high ambient temperatures, enhancing overall product reliability.

Minimum DC Current Gain (hFE) 40

High DC current gain provides consistent and stable amplification, ensuring accurate signal processing in various electronic circuits.

Maximum Operating Temperature 150 °C

Wide operating temperature range ensures reliable performance in both high and low temperature environments, making it versatile for different applications.

Maximum Collector-Emitter Voltage 100 V

High collector-emitter voltage rating allows for safe operation in high voltage circuits, offering flexibility in circuit design.

Transistor Element Material SILICON

Silicon material offers reliable and stable performance, making it ideal for long-term use in electronic devices.

Maximum Turn On Time (ton) 500 ns

Fast turn-on time ensures quick response and efficient switching, improving the overall performance of the transistor in switching applications.

Maximum Collector Current (IC) 7 A

High collector current rating allows for operation in high current circuits, providing flexibility and versatility in various applications.

Maximum Turn Off Time (toff) 2000 ns

Extended turn-off time ensures smooth and efficient switching transitions, enhancing the performance and reliability of the transistor.

Terminal Position SINGLE

Single terminal position simplifies installation and connection, making it easy to integrate into electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2334R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

40

Maximum Fall Time (tf):

1500 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2000 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.6 V

Trade Compliance

KSC2334R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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