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KSC2334Y

Onsemi

KSC2334Y by Onsemi

KSC2334Y by Onsemi is a NPN Power BJT with VCEsat of 0.6V, IC of 7A, and hFE of 120. Ideal for switching applications due to its fast turn-on time (ton) of 500ns and low fall time (tf) of 1500ns. With a max power dissipation of 40W, it can operate in temperatures up to 150°C.

Median Price

$0.942

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,719 parts In-Stock

1+ parts

$1.610

100+ parts

$1.030

1k+ parts

$0.711

10k+ parts

$0.616

12,719

$1.610

$1.030

$0.711

$0.616

Rochester

USA . 1,933 parts In-Stock

1+ parts

-

100+ parts

$0.822

1k+ parts

$0.682

10k+ parts

$0.608

1,933

-

$0.822

$0.682

$0.608

Verical

USA . 1,933 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.853

10k+ parts

-

1,933

-

-

$0.853

-

DigiKey

USA . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.030

10k+ parts

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600

-

-

$1.030

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,650 parts In-Stock

1+ parts

$0.568

100+ parts

-

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10k+ parts

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2,650

$0.568

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-

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Digiode

USA . 795 parts In-Stock

1+ parts

$0.640

100+ parts

-

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-

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795

$0.640

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 489 parts In-Stock

1+ parts

$0.568

100+ parts

-

1k+ parts

-

10k+ parts

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489

$0.568

-

-

-

Corphita

USA . 2,360 parts In-Stock

1+ parts

$0.607

100+ parts

-

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2,360

$0.607

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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Perfect Parts

USA . 40,798 parts In-Stock

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40,798

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QUARKTWIN TECHNOLOGY LTD

USA . 20,806 parts In-Stock

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20,806

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A-Z Elektronik GmbH

Germany . 12,120 parts In-Stock

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12,120

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Alle Elektronik GmbH

Germany . 8,080 parts In-Stock

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8,080

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SupplyDigital Components

Austria . 7,542 parts In-Stock

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7,542

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TANS Electronics

Latvia . 4,988 parts In-Stock

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4,988

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Microchip USA

USA . 4,869 parts In-Stock

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4,869

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Problanco Electronics

Mexico . 2,615 parts In-Stock

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2,615

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Kulean Microsystems

USA . 2,318 parts In-Stock

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2,318

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Supply Digital

USA . 1,983 parts In-Stock

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1,983

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Continental Prestige Electronics

USA . 600 parts In-Stock

1+ parts

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100+ parts

$0.810

1k+ parts

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600

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$0.810

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UHIMA Technologies

Türkiye . 89 parts In-Stock

1+ parts

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89

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Overview

Unleash the power of innovation with the KSC2334Y by Onsemi! Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability. From switching applications to power amplification, the possibilities are endless with this NPN transistor. With a maximum VCEsat of 0.6V and a minimum DC current gain of 120, this transistor is a game-changer in the world of electronics. Say goodbye to inefficiency and hello to seamless functionality with the KSC2334Y. Trust Onsemi for quality you can rely on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components, making the product long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, ensuring compatibility with various applications.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it suitable for different switching applications.

Maximum VCEsat: 0.6 V

Low VCEsat value indicates low power loss and high efficiency during operation.

Package Shape: RECTANGULAR

Compact size and easy to mount in various electronic devices.

Terminal Form: THROUGH-HOLE

Ensures easy soldering and secure connection to the circuit board.

Maximum Fall Time (tf): 1500 ns

Fast fall time ensures quick switching speed, improving overall performance.

No. of Terminals: 3

Simplified connectivity with external components.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows handling substantial power loads in circuits.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and stability in electronic applications.

Maximum Power Dissipation Ambient: 1.5 W

Efficient dissipation of heat, ensuring the transistor operates within safe temperature limits.

Minimum DC Current Gain (hFE): 120

Higher gain value ensures reliable amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 100 V

Handles high voltage applications safely and effectively.

Transistor Element Material: SILICON

Silicon material provides good performance, reliability, and efficiency in electronic circuits.

Maximum Turn On Time (ton): 500 ns

Fast turn-on time ensures quick response and efficient switching operation.

Maximum Collector Current (IC): 7 A

Capable of handling high current levels, suitable for power applications.

Maximum Turn Off Time (toff): 2000 ns

Efficient turn-off time contributes to overall switching speed and performance.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish for reliable circuit connections.

Terminal Position: SINGLE

Simplified connection and installation in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2334Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

120

Maximum Fall Time (tf):

1500 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2000 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.6 V

Trade Compliance

KSC2334Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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