Loading...

KSC2073H2

Onsemi

KSC2073H2 by Onsemi

KSC2073H2 by Onsemi is a NPN BJT transistor with max VCEsat of 1V, IC of 1.5A, and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 25W and operates up to 150 °C. Package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,109 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,109

-

-

-

-

Vyrian

USA . 1,012 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,012

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 679 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

679

$99.990

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,392 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,392

-

-

-

-

Problanco Electronics

Mexico . 6,139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,139

-

-

-

-

Kulean Microsystems

USA . 3,804 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,804

-

-

-

-

Supply Digital

USA . 1,870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,870

-

-

-

-

Corphita

USA . 1,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,479

-

-

-

-

TANS Electronics

Latvia . 1,433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,433

-

-

-

-

UHIMA Technologies

Türkiye . 717 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

717

-

-

-

-

Corohmni

South Africa . 381 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

381

-

-

-

-

SupplyDigital Components

Austria . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Overview

Unleash the power of high-quality amplification with the KSC2073H2 by Onsemi. Manufactured by a trusted industry leader, this NPN Power BJT transistor offers unparalleled performance and reliability for a variety of amplifier applications. With a maximum VCEsat of 1V and a maximum collector current of 1.5A, this transistor delivers exceptional value and benefits to customers seeking top-notch quality and efficiency. Upgrade your amplifier circuits with the KSC2073H2 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits, ensuring compatibility with industry standard configurations.

Configuration: SINGLE

Simplified design and easy integration into circuits with single transistor setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals, making it ideal for audio and other amplifier applications.

Maximum VCEsat: 1 V

Low saturation voltage helps in reducing power dissipation and improving efficiency in the circuit.

Package Shape: RECTANGULAR

Allows for compact and space-saving PCB layout designs.

Terminal Form: THROUGH-HOLE

Facilitates easy mounting and soldering onto PCBs, making it suitable for through-hole assembly.

No. of Terminals: 3

Simplifies circuit design and connection requirements with fewer terminals.

Maximum Power Dissipation (Abs): 25 W

Capable of handling high power levels without overheating, ensuring reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables secure and stable mounting of the transistor in the circuit.

Minimum DC Current Gain (hFE): 60

Provides high current gain, ensuring efficient signal amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring reliable operation in various conditions.

Maximum Collector-Emitter Voltage: 150 V

Can handle high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Uses silicon material for enhanced performance and reliability in electronic circuits.

Maximum Collector Current (IC): 1.5 A

Capable of handling moderate current levels, suitable for most amplifier and switching applications.

Terminal Position: SINGLE

Simplifies circuit connection and layout, reducing complexity in wiring.

Nominal Transition Frequency (fT): 4 MHz

Provides high transition frequency for fast signal amplification, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2073H2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

KSC2073H2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20