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KSC2073

Onsemi

KSC2073 by Onsemi

KSC2073 by Onsemi is a NPN BJT transistor with 150V VCE, 1.5A IC, and 25W power dissipation. Ideal for amplifier applications, it has a hFE of 40 and operates up to 150 °C. The package style is flange mount with a rectangular shape and matte tin finish on the terminals.

Median Price

$2.270

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 333 parts In-Stock

1+ parts

$2.270

100+ parts

$0.990

1k+ parts

$0.727

10k+ parts

$0.625

333

$2.270

$0.990

$0.727

$0.625

Distributors (In-Stock)

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Digiode

USA . 880 parts In-Stock

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$1.188

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880

$1.188

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Vyrian

USA . 2,576 parts In-Stock

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2,576

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Bristol Electronics

USA . 2,000 parts In-Stock

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Prism Electronics

USA . 121 parts In-Stock

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121

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LWI Electronics Inc

India . 5 parts In-Stock

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5

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Corphita

USA . 1,193 parts In-Stock

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$1.125

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$1.125

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Corohmni

South Africa . 68 parts In-Stock

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$1.250

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68

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Metaverse IC Inc.

Canada . 98,689 parts In-Stock

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Kepictronics

USA . 23,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,234 parts In-Stock

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TANS Electronics

Latvia . 7,785 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,362 parts In-Stock

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6,362

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,409 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,241 parts In-Stock

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Problanco Electronics

Mexico . 3,737 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 584 parts In-Stock

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584

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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568

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Kulean Microsystems

USA . 274 parts In-Stock

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274

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Perfect Parts

USA . 177 parts In-Stock

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Overview

The KSC2073 by Onsemi is a top-of-the-line Power Bipolar Junction Transistor (BJT) that delivers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for amplifier applications, offering a maximum VCEsat of 1V and a maximum operating temperature of 150 °C. With a minimum DC current gain of 40 and a maximum power dissipation of 25W, the KSC2073 provides exceptional value and benefits to customers looking for high-quality electronic components. Upgrade your projects with the KSC2073 for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easy to integrate into circuits.

Maximum VCEsat: 1 V

Low VCEsat helps reduce power consumption and heat dissipation, making it energy-efficient.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 25 W

High power dissipation capability allows for heavy-duty applications that require reliable performance.

Minimum DC Current Gain (hFE): 40

Higher minimum DC current gain ensures consistent and stable amplification in various circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding thermal conditions.

Maximum Collector-Emitter Voltage: 150 V

Allows for high voltage handling capability, making it suitable for voltage amplification applications.

Maximum Collector Current (IC): 1.5 A

Capable of handling high collector currents, enabling it to drive larger loads in circuits.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows for fast signal switching, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2073 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

KSC2073 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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