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KSC2333YTU

Onsemi

KSC2333YTU by Onsemi

KSC2333YTU by Onsemi is a NPN Power BJT with 400V VCEO, 2A IC, and 15W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The transistor comes in a plastic/epoxy package with through-hole terminals.

Median Price

$5.921

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,314 parts In-Stock

1+ parts

-

100+ parts

$11.340

1k+ parts

-

10k+ parts

-

9,314

-

$11.340

-

-

Flip Electronics (Authorized)

USA . 9,314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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9,314

-

-

-

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Rochester

USA . 9 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

$0.417

10k+ parts

$0.371

9

-

$0.502

$0.417

$0.371

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,195 parts In-Stock

1+ parts

$0.391

100+ parts

-

1k+ parts

-

10k+ parts

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2,195

$0.391

-

-

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Vyrian

USA . 2,832 parts In-Stock

1+ parts

$0.412

100+ parts

-

1k+ parts

-

10k+ parts

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2,832

$0.412

-

-

-

Flip Electronics

USA . 9,314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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9,314

-

-

-

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DigiKey Marketplace

USA . 9,314 parts In-Stock

1+ parts

-

100+ parts

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9,314

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,864 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

-

10k+ parts

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5,864

$0.350

-

-

-

Corphita

USA . 1,094 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

-

1,094

$0.371

-

-

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Corohmni

South Africa . 313 parts In-Stock

1+ parts

$0.412

100+ parts

-

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313

$0.412

-

-

-

Component Stockers USA

USA . 9 parts In-Stock

1+ parts

$0.420

100+ parts

-

1k+ parts

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10k+ parts

-

9

$0.420

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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100+ parts

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 22,869 parts In-Stock

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22,869

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Microchip USA

USA . 8,206 parts In-Stock

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8,206

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Problanco Electronics

Mexico . 7,702 parts In-Stock

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7,702

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Kulean Microsystems

USA . 6,527 parts In-Stock

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6,527

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A-Z Elektronik GmbH

Germany . 5,700 parts In-Stock

1+ parts

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100+ parts

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5,700

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TANS Electronics

Latvia . 4,530 parts In-Stock

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4,530

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Alle Elektronik GmbH

Germany . 3,800 parts In-Stock

1+ parts

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3,800

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Supply Digital

USA . 2,787 parts In-Stock

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2,787

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Glotronic Ltd.

UK . 1,800 parts In-Stock

1+ parts

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1,800

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Perfect Parts

USA . 1,133 parts In-Stock

1+ parts

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1,133

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SupplyDigital Components

Austria . 900 parts In-Stock

1+ parts

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100+ parts

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900

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UHIMA Technologies

Türkiye . 745 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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745

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Overview

Discover the power of the KSC2333YTU by Onsemi, a high-quality Power Bipolar Junction Transistor that offers unmatched performance and reliability. With Onsemi's reputation for excellence in manufacturing, this NPN transistor is perfect for switching applications, providing seamless operation and efficiency. Its robust design and maximum power dissipation of 15W ensure optimal performance, while the matte tin finish and flange mount package style make installation a breeze. Trust the KSC2333YTU to deliver superior results in your electronic projects, offering exceptional value and benefits to meet all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it suitable for use in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplifying signals and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies the circuit design and integration of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Enables easy soldering and reliable connections in through-hole PCB designs.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation capability, this transistor can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Facilitates secure mounting and heat dissipation for the transistor in electronic assemblies.

Minimum DC Current Gain (hFE): 40

Ensures amplification and stability in the operation of the transistor.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, suitable for various industrial and automotive applications.

Maximum Collector-Emitter Voltage: 400 V

Can withstand high voltages, making it suitable for use in power supply circuits and high voltage applications.

Transistor Element Material: SILICON

Provides good electrical performance and reliability, common in modern transistor designs.

Maximum Collector Current (IC): 2 A

Able to handle moderate current levels, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance for the terminal connections.

Terminal Position: SINGLE

Simplifies the installation and connection of the transistor in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2333YTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC2333YTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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