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KSC2334YTU

Onsemi

KSC2334YTU by Onsemi

KSC2334YTU by Onsemi is a NPN Power BJT with 100V VCE, 7A IC, and 40W Ptot. Ideal for switching applications due to its single configuration and hFE of 120. Its rectangular package with through-hole terminals makes it suitable for flange mount installations.

Median Price

$0.944

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

-

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-

2

$0.358

-

-

-

Farnell

UK . 46 parts In-Stock

1+ parts

$1.350

100+ parts

$0.612

1k+ parts

$0.397

10k+ parts

$0.374

46

$1.350

$0.612

$0.397

$0.374

Mouser Electronics

USA . 1,045 parts In-Stock

1+ parts

$1.750

100+ parts

$0.592

1k+ parts

$0.466

10k+ parts

$0.453

1,045

$1.750

$0.592

$0.466

$0.453

Newark

USA . 244 parts In-Stock

1+ parts

$1.800

100+ parts

$0.855

1k+ parts

$0.660

10k+ parts

$0.561

244

$1.800

$0.855

$0.660

$0.561

Element14

Singapore . 46 parts In-Stock

1+ parts

$2.370

100+ parts

$1.030

1k+ parts

$0.656

10k+ parts

$0.643

46

$2.370

$1.030

$0.656

$0.643

Flip Electronics (Authorized)

USA . 3,025 parts In-Stock

1+ parts

-

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-

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3,025

-

-

-

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Master Electronics

USA . 1,950 parts In-Stock

1+ parts

-

100+ parts

$0.379

1k+ parts

$0.358

10k+ parts

$0.342

1,950

-

$0.379

$0.358

$0.342

Verical

USA . 1,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.486

10k+ parts

-

1,950

-

-

$0.486

-

Rochester

USA . 61 parts In-Stock

1+ parts

-

100+ parts

$0.538

1k+ parts

$0.447

10k+ parts

$0.398

61

-

$0.538

$0.447

$0.398

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,263 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

-

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2,263

$0.340

-

-

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Vyrian

USA . 998 parts In-Stock

1+ parts

$0.358

100+ parts

-

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998

$0.358

-

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Flip Electronics

USA . 58,391 parts In-Stock

1+ parts

-

100+ parts

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58,391

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-

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IBS Electronics

USA . 5,950 parts In-Stock

1+ parts

-

100+ parts

$0.532

1k+ parts

$0.502

10k+ parts

$0.480

5,950

-

$0.532

$0.502

$0.480

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.800

10k+ parts

$0.727

2,000

-

-

$0.800

$0.727

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,023 parts In-Stock

1+ parts

$0.322

100+ parts

-

1k+ parts

-

10k+ parts

-

2,023

$0.322

-

-

-

Component Stockers USA

USA . 24,385 parts In-Stock

1+ parts

$0.350

100+ parts

$0.550

1k+ parts

$0.450

10k+ parts

$0.440

24,385

$0.350

$0.550

$0.450

$0.440

Corohmni

South Africa . 96 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

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10k+ parts

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96

$0.358

-

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Continental Prestige Electronics

USA . 34 parts In-Stock

1+ parts

$1.030

100+ parts

$0.626

1k+ parts

$0.479

10k+ parts

-

34

$1.030

$0.626

$0.479

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 27,251 parts In-Stock

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27,251

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Microchip USA

USA . 7,289 parts In-Stock

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7,289

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Kulean Microsystems

USA . 7,208 parts In-Stock

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7,208

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SupplyDigital Components

Austria . 2,363 parts In-Stock

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2,363

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Supply Digital

USA . 2,174 parts In-Stock

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2,174

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Infinite Electronics LLP (Excess)

. 2,010 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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TANS Electronics

Latvia . 1,877 parts In-Stock

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1,877

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Perfect Parts

USA . 1,681 parts In-Stock

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1,681

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Problanco Electronics

Mexico . 842 parts In-Stock

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842

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UHIMA Technologies

Türkiye . 703 parts In-Stock

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703

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Overview

Upgrade your power control applications with the KSC2334YTU by Onsemi. Manufactured with top-quality materials and designed for efficiency, this NPN Power Bipolar Junction Transistor offers a maximum collector-emitter voltage of 100V and a maximum collector current of 7A. Perfect for switching applications, this transistor delivers reliable performance with a minimum DC current gain of 120. Trust Onsemi's reputation for excellence and choose the KSC2334YTU for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and durability, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easy to work with and are suitable for simple circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle high power dissipation and current levels.

Package Shape: RECTANGULAR

Rectangular packages offer easy mounting and heat dissipation, making them practical for various circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and are user-friendly for manual soldering.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount packages offer secure mounting options and can be easily attached to heatsinks for better thermal management.

Minimum DC Current Gain (hFE): 120

A high DC current gain indicates good amplification capabilities, making this transistor suitable for signal amplification purposes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature conditions without performance degradation.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating allows this transistor to be used in applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice for various electronic applications.

Maximum Collector Current (IC): 7 A

With a high collector current rating, this transistor can handle large current flows without damage.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and ensures a reliable connection between the transistor and the circuit board.

Terminal Position: SINGLE

Single terminal position simplifies the circuit connection process and offers ease of use during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC2334YTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC2334YTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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