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KLI-2113-AAB-ED-AE

Onsemi

KLI-2113-AAB-ED-AE by Onsemi

KLI-2113-AAB-ED-AE by Onsemi is an Image Sensor with 14x14 um pixel size, 2098 horizontal and vertical pixels. It operates b/w -25 to 80 °C, has a dynamic range of 76 dB, and outputs analog voltage. Suitable for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,151 parts In-Stock

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Digiode

USA . 1,789 parts In-Stock

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Problanco Electronics

Mexico . 7,659 parts In-Stock

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TANS Electronics

Latvia . 6,261 parts In-Stock

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SupplyDigital Components

Austria . 4,154 parts In-Stock

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UHIMA Technologies

Türkiye . 807 parts In-Stock

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Corphita

USA . 807 parts In-Stock

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Kulean Microsystems

USA . 291 parts In-Stock

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Corohmni

South Africa . 161 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the KLI-2113-AAB-ED-AE by Onsemi. This high-quality image sensor offers unparalleled precision and reliability, making it the perfect choice for a wide range of applications. From medical imaging to industrial automation, this CCD sensor delivers exceptional performance, ensuring that every detail is captured with stunning clarity. Experience the value and benefits of superior image quality with the KLI-2113-AAB-ED-AE – your go-to solution for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um) 14X14

Larger pixel size allows for more light to be captured, resulting in higher image quality and improved low-light performance.

Maximum Supply Voltage 12.5 V

Higher supply voltage allows for efficient and stable operation of the image sensor.

Body Width 14.66 inch

Compact body width makes the image sensor suitable for applications where space is limited.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensors provide high-quality image resolution and good color reproduction, making them ideal for professional and industrial imaging applications.

Body Height 4.24 mm

Low body height allows for easy integration into compact devices or systems.

Package Shape or Style RECTANGULAR

Rectangular package shape provides easy mounting and integration into various designs and systems.

Minimum Supply Voltage 11.5 V

Lower minimum supply voltage ensures energy efficiency and extends the operating life of the image sensor.

Maximum Operating Temperature 80 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel 2098

High horizontal pixel count enables detailed and high-resolution imaging capabilities.

Output Type ANALOG VOLTAGE

Analog voltage output allows for easy interfacing with other electronic components and systems.

Minimum Operating Temperature -25 °C

Low minimum operating temperature ensures the image sensor can function in cold environments without any issues.

Housing CERAMIC

Ceramic housing provides durability and protection for the sensitive components of the image sensor.

Dynamic Range 76 dB

Wide dynamic range allows for capturing both bright and dark areas in a single image without losing detail.

Vertical Pixel 2098

High vertical pixel count ensures sharp and detailed images without loss of resolution.

Body Length/Diameter 48 mm

Optimal body length/diameter ratio for efficient integration and space-saving in device design.

Data Rate 20 Mbps

High data rate allows for fast and efficient transfer of image data for real-time applications.

Termination Type SOLDER

Solder termination ensures secure and reliable connections for long-term usage.

Array Type LINEAR

Linear array design enables simple and straightforward image capture and processing in scanning applications.

Mounting Feature THROUGH HOLE MOUNT

Through-hole mounting feature provides easy and secure installation in various electronic systems and devices.

Technical Specifications

Image Sensors KLI-2113-AAB-ED-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 11.5 UV/ELECTRON

Array Type:

LINEAR

Body Width:

14.66 inch

Body Height:

4.24 mm

Body Length/Diameter:

48 mm

Data Rate:

20 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

2098

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensors or Transducers Type:

Maximum Supply Voltage:

12.5 V

Minimum Supply Voltage:

11.5 V

Termination Type:

SOLDER

Vertical Pixel:

2098

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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