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KLI-2113-AAB-ED-AA

Onsemi

KLI-2113-AAB-ED-AA by Onsemi

KLI-2113-AAB-ED-AA by Onsemi is an Image Sensor with 14x14 um pixel size, 2098 horizontal and vertical pixels. It operates b/w -25 to 80 °C, with a dynamic range of 76 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,091 parts In-Stock

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Digiode

USA . 760 parts In-Stock

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760

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QUARKTWIN TECHNOLOGY LTD

USA . 17,890 parts In-Stock

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TANS Electronics

Latvia . 6,402 parts In-Stock

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Kulean Microsystems

USA . 5,303 parts In-Stock

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SupplyDigital Components

Austria . 3,722 parts In-Stock

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Corphita

USA . 1,963 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 925 parts In-Stock

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Problanco Electronics

Mexico . 348 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Elevate your imaging capabilities with the KLI-2113-AAB-ED-AA by Onsemi. As a leading manufacturer of Image Sensors, Onsemi delivers top-notch quality and reliability in every product. Whether you're capturing stunning visuals for security systems, medical devices, or industrial applications, this sensor excels in providing crisp, clear images with a wide dynamic range. Experience the value and benefits of superior imaging technology with the KLI-2113-AAB-ED-AA, designed to meet your demanding requirements and exceed your expectations.

Feature Benefit Bullets

Pixel Size (um): 14X14

Larger pixel size allows for better light sensitivity and improved image quality.

Maximum Supply Voltage: 12.5 V

Higher maximum supply voltage allows for more flexibility in power management.

Body Width: 14.66 inch

Compact size makes it suitable for various applications with limited space.

Power Supplies (V): 12

Stable power supply ensures consistent performance.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors offer high image quality and low noise performance.

Body Height: 4.24 mm

Low profile design for easy integration into devices.

Package Shape or Style: RECTANGULAR

Rectangular shape for efficient use of space and ease of mounting.

Minimum Supply Voltage: 11.5 V

Low minimum supply voltage for energy efficiency.

Maximum Operating Temperature: 80 °C

Wide operating temperature range for versatility in various environments.

Horizontal Pixel: 2098

High resolution for detailed images.

Output Type: ANALOG VOLTAGE

Analog voltage output for easy interfacing with other systems.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature for use in cold environments.

Housing: CERAMIC

Durable ceramic housing for long-term reliability.

Dynamic Range: 76 dB

Wide dynamic range for capturing details in both dark and bright areas.

Vertical Pixel: 2098

Equal vertical and horizontal pixel count for balanced image resolution.

Body Length/Diameter: 48 mm

Compact and streamlined design for easy installation.

Data Rate: 20 Mbps

High data rate for quick image transfer and processing.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Array Type: LINEAR

Linear array configuration for precise image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for secure and stable installation.

Technical Specifications

Image Sensors KLI-2113-AAB-ED-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 11.5 UV/ELECTRON

Array Type:

LINEAR

Body Width:

14.66 inch

Body Height:

4.24 mm

Body Length/Diameter:

48 mm

Data Rate:

20 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

2098

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Power Supplies (V):

12

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

12.5 V

Minimum Supply Voltage:

11.5 V

Termination Type:

SOLDER

Vertical Pixel:

2098

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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