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KLI-2113-AAA-ER-AE

Onsemi

KLI-2113-AAA-ER-AE by Onsemi

The Onsemi KLI-2113-AAA-ER-AE is an image sensor with 14x14 um pixel size, 2098 horizontal and vertical pixels, and a dynamic range of 76 dB. It operates b/w -25 to 80 °C with a supply voltage range of 11.5V to 12.5V. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,146 parts In-Stock

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Digiode

USA . 1,523 parts In-Stock

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1,523

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Problanco Electronics

Mexico . 6,195 parts In-Stock

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SupplyDigital Components

Austria . 4,742 parts In-Stock

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TANS Electronics

Latvia . 1,288 parts In-Stock

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UHIMA Technologies

Türkiye . 792 parts In-Stock

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792

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Corphita

USA . 738 parts In-Stock

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Corohmni

South Africa . 234 parts In-Stock

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Kulean Microsystems

USA . 21 parts In-Stock

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Overview

Discover the cutting-edge KLI-2113-AAA-ER-AE Image Sensor by Onsemi, a top-tier manufacturer known for delivering high-quality products. Ideal for a wide range of applications, this sensor offers unparalleled precision and reliability. With its advanced features and superior performance, this sensor is designed to meet the diverse needs of customers. Experience the value and benefits that this innovative product brings to your projects. Elevate your imaging capabilities with the KLI-2113-AAA-ER-AE and unlock endless possibilities.

Feature Benefit Bullets

Pixel Size (um): 14X14

Larger pixel size allows for better light sensitivity, resulting in clearer and higher quality images.

Maximum Supply Voltage: 12.5 V

Higher maximum supply voltage ensures stable and reliable performance under varying power conditions.

Body Width: 14.66 inch

Compact body width makes the sensor easy to integrate into different devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

A CCD image sensor ensures high-quality image capture with minimal noise and distortion.

Body Height: 4.24 mm

Low body height allows for slim and sleek design integration, ideal for compact devices.

Package Shape or Style: RECTANGULAR

Rectangular package shape offers versatility in mounting options and space-saving design.

Minimum Supply Voltage: 11.5 V

Lower minimum supply voltage helps in energy efficiency and reduces power consumption.

Maximum Operating Temperature: 80 °C

Wide operating temperature range ensures the sensor can perform in various environments without overheating.

Horizontal Pixel: 2098

High horizontal pixel count allows for detailed and sharp images with high resolution.

Output Type: ANALOG VOLTAGE

Analog voltage output simplifies connectivity and compatibility with a wide range of devices and systems.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature allows for reliable performance even in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensor, making it long-lasting and robust.

Dynamic Range: 76 dB

High dynamic range ensures accurate representation of both bright and dark areas in the image, resulting in better quality photos.

Vertical Pixel: 2098

High vertical pixel count complements the horizontal pixel count, delivering detailed images with precise resolution.

Body Length/Diameter: 48 mm

Medium body length/diameter offers a balance between compact size and sufficient space for sensor components.

Data Rate: 20 Mbps

High data rate allows for fast and efficient transfer of image data, enabling real-time processing and recording.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections, preventing signal loss or disruptions.

Array Type: LINEAR

Linear array type simplifies image capture and processing, ideal for applications requiring linear image scanning.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount option offers easy and secure installation, ensuring stability and consistency in sensor placement.

Technical Specifications

Image Sensors KLI-2113-AAA-ER-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 11.5 UV/ELECTRON

Array Type:

LINEAR

Body Width:

14.66 inch

Body Height:

4.24 mm

Body Length/Diameter:

48 mm

Data Rate:

20 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

2098

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensors or Transducers Type:

Maximum Supply Voltage:

12.5 V

Minimum Supply Voltage:

11.5 V

Termination Type:

SOLDER

Vertical Pixel:

2098

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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