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KLI-2113-RAA-ED-AE

Onsemi

KLI-2113-RAA-ED-AE by Onsemi

KLI-2113-RAA-ED-AE by Onsemi is an Image Sensor with 14x14 um pixel size, 76 dB dynamic range, and 20 Mbps data rate. It is used in applications requiring voltage output, such as industrial imaging systems and surveillance cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,181 parts In-Stock

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Digiode

USA . 853 parts In-Stock

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SupplyDigital Components

Austria . 8,120 parts In-Stock

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TANS Electronics

Latvia . 4,289 parts In-Stock

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Problanco Electronics

Mexico . 4,266 parts In-Stock

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Kulean Microsystems

USA . 989 parts In-Stock

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Corphita

USA . 889 parts In-Stock

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UHIMA Technologies

Türkiye . 519 parts In-Stock

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Corohmni

South Africa . 429 parts In-Stock

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Overview

Capture stunning images with the KLI-2113-RAA-ED-AE Image Sensor by Onsemi. Manufactured by industry leader Onsemi, this sensor offers high quality and reliability for a variety of applications. With a pixel size of 14x14 um and a dynamic range of 76 dB, this sensor provides exceptional image resolution and clarity. Whether you are in the medical, automotive, or security industry, this sensor delivers value, benefits, and advantages that will enhance your products and give you a competitive edge in the market. Trust Onsemi's expertise and experience in image sensor technology to elevate your imaging solutions to the next level.

Feature Benefit Bullets

Pixel Size (um): 14X14

Smaller pixel size allows for higher resolution images to be produced, making this sensor suitable for applications that require detailed imagery.

Maximum Supply Voltage: 12.5 V

A higher supply voltage allows the sensor to operate efficiently even under demanding conditions, ensuring reliable performance.

Body Width: 15.24 inches

The compact body width of the sensor makes it easy to integrate into various systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, this product offers high-quality image capture capabilities suitable for professional imaging applications.

Body Height: 5.51 mm

The slim body height of the sensor enables it to be used in compact devices while still delivering excellent performance.

Package Shape or Style: RECTANGULAR

The rectangular package shape ensures easy mounting and alignment within electronic systems, simplifying the integration process.

Minimum Supply Voltage: 11.5 V

With a low minimum supply voltage requirement, this sensor can operate efficiently even in low-power situations, extending its usability.

Output Type: VOLTAGE OUTPUT

Voltage output simplifies the interface with other electronic components, making it easier to integrate this sensor into various systems.

Housing: CERAMIC

The ceramic housing provides durability and protection to the sensor, allowing it to withstand harsh environments and ensure long-term reliability.

Dynamic Range: 76 dB

A high dynamic range allows the sensor to capture both dark and bright areas in a scene accurately, resulting in high-quality images with excellent contrast.

Body Length/Diameter: 48.01 mm

The body length allows for additional features to be integrated into the sensor, enhancing its functionality and versatility.

Data Rate: 20 Mbps

A high data rate enables fast and efficient transfer of image data, making this sensor ideal for applications that require real-time processing.

Termination Type: SOLDER

Solder termination ensures secure connections and reliable performance, making the sensor suitable for rugged environments and high-vibration applications.

Array Type: LINEAR

A linear array type allows the sensor to capture images with high spatial resolution along a single axis, making it suitable for applications that require precision imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure attachment, making this sensor easy to integrate into various electronic systems.

Technical Specifications

Image Sensors KLI-2113-RAA-ED-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 11.5 MICRO VOLT PER ELECTRON

Array Type:

LINEAR

Body Width:

15.24 inch

Body Height:

5.51 mm

Body Length/Diameter:

48.01 mm

Data Rate:

20 Mbps

Dynamic Range:

76 dB

Housing:

CERAMIC

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensors or Transducers Type:

Maximum Supply Voltage:

12.5 V

Minimum Supply Voltage:

11.5 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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