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KAI-43140-AXA-JP-B2

Onsemi

KAI-43140-AXA-JP-B2 by Onsemi

KAI-43140-AXA-JP-B2 by Onsemi is an image sensor with 4.5x4.5 um pixel size, 8040 horizontal pixels, and 5360 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,028 parts In-Stock

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Digiode

USA . 1,707 parts In-Stock

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AZTECH Wire

Italy . 328 parts In-Stock

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$17.710

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Kulean Microsystems

USA . 8,234 parts In-Stock

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Problanco Electronics

Mexico . 5,811 parts In-Stock

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TANS Electronics

Latvia . 5,480 parts In-Stock

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SupplyDigital Components

Austria . 4,614 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 2,188 parts In-Stock

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UHIMA Technologies

Türkiye . 928 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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Overview

Capture every moment with crystal clear precision using the KAI-43140-AXA-JP-B2 image sensor by Onsemi. Crafted with quality and expertise, this sensor offers unparalleled performance in a compact design. Ideal for a wide range of applications, from surveillance systems to medical imaging, this sensor delivers exceptional value and benefits. Elevate your projects with the superior image quality, reliability, and versatility that only Onsemi can provide. Experience the difference with the KAI-43140-AXA-JP-B2 - where innovation meets excellence.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

With a small pixel size of 4.5X4.5 um, this image sensor can capture detailed and sharp images with high resolution.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage of 15.5 V ensures reliable operation and allows for flexibility in power supply options.

Body Width: 45.34 inch

The compact body width of 45.34 inches makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor, it offers excellent image quality, low noise performance, and good sensitivity, making it ideal for high-quality imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape or style makes it easy to integrate this image sensor into various camera designs or systems.

Minimum Supply Voltage: 14.5 V

With a low minimum supply voltage of 14.5 V, this image sensor can operate efficiently even in low power conditions.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70 °C enables this image sensor to withstand harsh environmental conditions.

Horizontal Pixel: 8040

With a high horizontal pixel count of 8040, this image sensor can capture wide-angle shots with clarity and detail.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures that this image sensor can function reliably even in extreme cold conditions.

Maximum Operating Current: 11 mA

With a low maximum operating current of 11 mA, this image sensor consumes less power, making it energy-efficient.

Dynamic Range: 60 dB

The high dynamic range of 60 dB allows this image sensor to capture images with a wide range of brightness levels, resulting in better overall image quality.

Vertical Pixel: 5360

The vertical pixel count of 5360 contributes to the image sensor's ability to capture high-resolution images with fine details in the vertical axis.

Body Length/Diameter: 47.24 mm

The compact body length or diameter of 47.24 mm makes this image sensor easy to handle and integrate into camera systems.

Optical Format (inch): 1.7

With an optical format of 1.7 inches, this image sensor is compatible with a wide range of lenses and optical systems, providing flexibility in design.

Data Rate: 60 Mbps

The high data rate of 60 Mbps allows this image sensor to transmit image data quickly and efficiently, making it suitable for real-time imaging applications.

Termination Type: SOLDER

The solder termination type simplifies the process of connecting this image sensor to other components or circuit boards, facilitating easy integration.

Array Type: INTERLINE

Being an interline array type, this image sensor offers fast readout speeds and reduced blooming effects, resulting in more accurate and cleaner images.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature allows easy and secure mounting of this image sensor onto PCBs or other surfaces, ensuring stable and reliable operation.

Technical Specifications

Image Sensors KAI-43140-AXA-JP-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT AS OUTPUT SENSITIVITY OF 42 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Data Rate:

60 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

8040

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.7

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5360

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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