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KAI-08670-FXA-JD-B2

Onsemi

KAI-08670-FXA-JD-B2 by Onsemi

Onsemi's KAI-08670-FXA-JD-B2 image sensor features 7.4x7.4 um pixel size, 40 MHz master clock, and 82 dB dynamic range. Ideal for applications requiring high-quality imaging such as surveillance cameras, industrial inspection systems, and medical devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,464 parts In-Stock

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Digiode

USA . 350 parts In-Stock

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AZTECH Wire

Italy . 209 parts In-Stock

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$8.550

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SupplyDigital Components

Austria . 6,742 parts In-Stock

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Problanco Electronics

Mexico . 2,736 parts In-Stock

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TANS Electronics

Latvia . 2,612 parts In-Stock

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UHIMA Technologies

Türkiye . 768 parts In-Stock

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Corphita

USA . 409 parts In-Stock

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Corohmni

South Africa . 217 parts In-Stock

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Kulean Microsystems

USA . 122 parts In-Stock

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Overview

Unleash the power of cutting-edge imaging technology with the KAI-08670-FXA-JD-B2 by Onsemi. As a leader in image sensor manufacturing, Onsemi delivers unrivaled quality and reliability in every product. Ideal for a wide range of applications, this image sensor offers unparalleled performance and precision. Elevate your projects to new heights with the KAI-08670-FXA-JD-B2, providing exceptional value, benefits, and advantages that exceed expectations. Trust Onsemi to provide the innovation you need for success.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images with finer details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 40 MHz

High master clock frequency enables faster image processing and data transfer.

Body Width: 45.34 inch

Compact body width makes it suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors provide high-quality images with low noise levels, making it ideal for imaging applications.

Body Height: 3.3 mm

Low body height allows for easy installation in thin devices or spaces.

Package Shape or Style: RECTANGULAR

Rectangular package shape offers efficient use of space and easy integration into designs.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in saving power and energy consumption.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures functionality in various environmental conditions.

Horizontal Pixel: 3600

Higher horizontal pixel count results in better image resolution and clarity.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold environments.

Maximum Operating Current: 11 mA

Low operating current helps in reducing power consumption and heat generation.

Dynamic Range: 82 dB

High dynamic range enables capture of both bright and dark areas with detail and accuracy.

Vertical Pixel: 2400

Higher vertical pixel count contributes to overall image quality and resolution.

Body Length/Diameter: 47.24 mm

Moderate body length allows for flexibility in integration and placement within devices.

Optical Format (inch): 1.26

Optical format indicates compatibility with various lens options for different imaging needs.

Termination Type: SOLDER

Solder termination provides secure and reliable electrical connections for the image sensor.

Frame Rate: 12 fps

Decent frame rate enables smooth video capture and processing for real-time applications.

Array Type: INTERLINE

Interline array type offers fast readout speeds and reduced blooming effects for high-quality images.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting facilitates easy and sturdy installation of the image sensor onto circuit boards.

Technical Specifications

Image Sensors KAI-08670-FXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 33 AND 9.7 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.3 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

82 dB

Frame Rate:

12 fps

Horizontal Pixel:

3600

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.26

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2400

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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