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AR0134CSSC00SUEA0-TRBR

Onsemi

AR0134CSSC00SUEA0-TRBR by Onsemi

AR0134CSSC00SUEA0-TRBR by Onsemi is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. It operates at -30 to 70 °C, with a max supply voltage of 1.95V and a frame rate of 60fps. Ideal for applications requiring high-quality digital imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,691 parts In-Stock

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Digiode

USA . 849 parts In-Stock

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AZTECH Wire

Italy . 74 parts In-Stock

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$18.940

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TANS Electronics

Latvia . 8,028 parts In-Stock

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SupplyDigital Components

Austria . 7,926 parts In-Stock

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Kulean Microsystems

USA . 1,870 parts In-Stock

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Northwest PG Solutions

USA . 703 parts In-Stock

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Native Components

USA . 634 parts In-Stock

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UHIMA Technologies

Türkiye . 566 parts In-Stock

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Corohmni

South Africa . 427 parts In-Stock

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Problanco Electronics

Mexico . 338 parts In-Stock

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Corphita

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Overview

Enhance your imaging and vision systems with the AR0134CSSC00SUEA0-TRBR Image Sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology in the field of image sensors. Perfect for a wide range of applications, this sensor offers unparalleled value and benefits to customers looking to improve their camera systems. With high performance capabilities and exceptional image quality, the AR0134CSSC00SUEA0-TRBR is a game-changer in the world of imaging technology.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images and better low light performance.

Maximum Supply Voltage: 1.95 V

Allows for efficient power usage and flexibility in power supply options.

Master Clock: 50 MHz

Provides fast data processing and high-speed image capture capabilities.

Body Width: 9 inch

Compact size for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption, making them energy-efficient.

Maximum Operating Temperature: 70 °C

Suitable for operation in various environmental conditions.

Output Interface Type: 2-WIRE INTERFACE

Easy connectivity and communication with other devices.

Technical Specifications

Image Sensors AR0134CSSC00SUEA0-TRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

SINGLE FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Data Rate:

700 Mbps

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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