Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
J177,126
NXP Semiconductors
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3;
SINGLE
30 V
300 ohm
JUNCTION
TO-92
O-PBCY-T3
e3
1
3
DEPLETION MODE
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
P-CHANNEL
.4 W
Not Qualified
FET General Purpose Small Signal
NO
MATTE TIN
THROUGH-HOLE
BOTTOM
SWITCHING
SILICON
2SK3813-AZ
Renesas Electronics
The Renesas Electronics 2SK3813-AZ is a N-CHANNEL FET with max ID of 60A and Pd of 84W. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial use where peak reflow temp reaches 260°C.
60 A
METAL-OXIDE SEMICONDUCTOR
260
N-CHANNEL
84 W
FET General Purpose Power
10
2SJ325-AY
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
4 A
NOT SPECIFIED
20 W
Other Transistors
2N6661JTXV02
Vishay Intertechnology
Vishay Intertechnology's 2N6661JTXV02 is a N-CHANNEL FET with 90V DS breakdown voltage and 0.86A max drain current. Ideal for switching applications, it features a built-in diode, 6.25W power dissipation, and operates in enhancement mode at up to 150°C.
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
DRAIN
SINGLE WITH BUILT-IN DIODE
90 V
.86 A
4 ohm
10 pF
TO-205AD
O-MBCY-W3
ENHANCEMENT MODE
METAL
6.25 W
FET General Purpose Powers
WIRE
2N6661JTX02
Vishay Intertechnology's 2N6661JTX02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A Drain Current, and 6.25W Power Dissipation. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE in a ROUND package with METAL body.
BS170G
Onsemi
BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
60 V
.5 A
5 ohm
TO-226AA
e1
.35 W
Tin/Silver/Copper (Sn/Ag/Cu)
40
2N7000RLRAG
2N7000RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in Enhancement Mode applications, featuring a built-in diode and 5ohm Drain-Source Resistance for efficient performance.
.2 A
5 pF
2N7000RLRMG
2N7000RLRMG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for applications requiring Enhancement Mode operation, it features a built-in diode and 5ohm On Resistance. Package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
2N7000RLRPG
2N7000RLRPG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in applications requiring Enhancement Mode operation, such as low-power switching circuits. With a max power dissipation of 0.35W and operating temperature up to 150 °C, it offers reliable performance in various electronic designs.
2N5460G
2N5460G by Onsemi is a P-CHANNEL FET with a max power dissipation of 0.35W. Ideal for amplifier applications, it operates in depletion mode with 3 terminals and a peak reflow temperature of 260°C. The transistor features a feedback capacitance of 2pF and is housed in a cylindrical package made of plastic/epoxy material.
2 pF
135 Cel
AMPLIFIER
BS107AG
BS107AG by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.25A Drain Current, and 6.4 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE. Package style is CYLINDRICAL with THROUGH-HOLE terminals.
200 V
.25 A
6.4 ohm
BS107ARL1G
BS107ARL1G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage. It's used for SWITCHING applications, operating in ENHANCEMENT MODE with 0.25A Drain Current. The transistor has a Max Power Dissipation of 0.35W and Max Operating Temperature of 150°C.
VN2222LLRLRAG
VN2222LLRLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.15A Drain Current, 7.5 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 0.4W and peak reflow temperature of 260 °C, it offers reliable performance in various electronic circuits.
.15 A
7.5 ohm
TIN SILVER COPPER
2N6660-E3
2N6660-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.99A Drain Current, and 6.25W Power Dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and built-in DIODE configuration.
LOW THRESHOLD
.99 A
3 ohm
2N6661-E3
Vishay Intertechnology's 2N6661-E3 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A Drain Current, and 6.25W Power Dissipation. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operating temperature range from -55°C to 150°C makes it versatile for various electronic designs.
e4
-55 Cel
SILVER
TP0610KL-TR1-E3
TP0610KL-TR1-E3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 0.27A and a max drain-source on resistance of 6 ohm.
ESD PROTECTION
.27 A
6 ohm
J110G
J110G by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a Max Power Dissipation of 0.31W and Max Drain-Source On Resistance of 18Ω. Ideal for SWITCHING applications due to its high feedback capacitance and low on resistance.
18 ohm
15 pF
.31 W
BS170RLRAG
BS170RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
2N5457G
2N5457G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 3 terminals and 0.31W power dissipation. With a max operating temperature of 150°C, it features a feedback capacitance of 3pF and uses Tin/Silver/Copper terminal finish.
LOW NOISE
25 V
3 pF
2N5638RLRAG
2N5638RLRAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 30 ohm Max RDS. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.31W Power Dissipation. Its ROUND package style and SILICON material make it suitable for various electronic circuits.
30 ohm
4 pF
2N5639RLRAG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-609 Code: e1; No. of Terminals: 3;
60 ohm
BS108ZL1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 200 V; No. of Elements: 1;
LOGIC LEVEL COMPATIBLE
8 ohm
BS170RL1G
BS170RL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
EUROPEAN PART NUMBER
BS170RLRMG
BS170RLRMG by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
BS170ZL1G
BS170ZL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring SINGLE configuration with BUILT-IN DIODE, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
J110RLRAG
Onsemi's J110RLRAG is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.31W and a max drain-source on resistance of 18 ohm. Ideal for SWITCHING applications due to its high feedback capacitance of 15pF and peak reflow temperature of 260°C.
J111RL1G
J111RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max on resistance of 30 ohm, it has a feedback capacitance of 5pF and uses silicon as the transistor element material.
CHOPPER
J111RLRAG
J111RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Featuring a max on resistance of 30Ω, this transistor has a cylindrical package style suitable for various electronic designs.
J111RLRPG
J111RLRPG by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35W and a max drain-source on resistance of 30 ohm. Ideal for CHOPPER applications due to its SILICON element material and low feedback capacitance of 5pF.
J112G
J112G by Onsemi is a N-CHANNEL FET with 3 terminals in a ROUND package. Operating in DEPLETION MODE, it has a max power dissipation of 0.4W and max drain-source resistance of 50 ohm. Ideal for CHOPPER applications due to its low feedback capacitance of 5pF and temp rating up to 150 °C.
50 ohm
J112RL1G
J112RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max drain-source resistance of 50 ohm. Its cylindrical package body is made of plastic/epoxy material.
J112RLRAG
J112RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max drain-source resistance of 50 ohm, this transistor has a cylindrical package shape.
MPF4392G
MPF4392G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. With a max power dissipation of 0.625W and operating temperature of 150 °C, it is ideal for DEPLETION MODE operation in various electronic circuits.
3.5 pF
.625 W
MPF4393G
The Onsemi MPF4393G is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. This SINGLE configuration transistor operates in DEPLETION MODE with a max power dissipation of 0.625W at 150 °C.
100 ohm
VN2410LZL1G
VN2410LZL1G by Onsemi is a N-CHANNEL FET with 240V DS breakdown voltage, 0.2A drain current, and 10 ohm on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
240 V
10 ohm
20 pF
IPI80N06S3-07
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Minimum DS Breakdown Voltage: 55 V; Package Style (Meter): IN-LINE;
AVALANCHE RATED
55 V
80 A
.0068 ohm
TO-262AA
R-PSIP-T3
175 Cel
RECTANGULAR
IN-LINE
135 W
IPP80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0068 ohm;
TO-220AB
R-PSFM-T3
FLANGE MOUNT
SFT1341-W
The Onsemi SFT1341-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, such as power management circuits or motor control systems.
10 A
e6
15 W
Tin/Bismuth (Sn/Bi)
SFT1342-W
The Onsemi SFT1342-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for applications requiring high power handling in temperatures up to 150°C, it features metal-oxide semiconductor technology and tin bismuth terminal finish.
12 A
TIN BISMUTH
TP0606N3-G-P002
Microchip Technology
Microchip TP0606N3-G-P002 is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 1W Power Dissipation and 3.5 ohm On Resistance. Operating from -55 to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a CYLINDRICAL package.
.32 A
3.5 ohm
35 pF
1 W
TP0606N3-G-P003
Microchip TP0606N3-G-P003 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1W Power Dissipation, -55 to 150°C Operating Temperature range, and 3.5 ohm Drain-Source On Resistance.
© 2023 All rights reserved
