Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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LSK489TO-716LROHS
Linear Integrated Systems
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 3 pF;
SEPARATE, 2 ELEMENTS
JUNCTION
3 pF
TO-71
O-XBCY-W6
2
6
DEPLETION MODE
150 Cel
-55 Cel
UNSPECIFIED
ROUND
CYLINDRICAL
N-CHANNEL
.5 W
FET General Purpose Small Signal
NO
WIRE
BOTTOM
AMPLIFIER
SILICON
2N6660JTX02
Vishay Intertechnology
Vishay Intertechnology's 2N6660JTX02 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.99A max drain current. Ideal for amplifier applications, it features a built-in diode, 3 ohm max on resistance, and operates in enhancement mode at up to 150°C.
SINGLE WITH BUILT-IN DIODE
60 V
.99 A
3 ohm
METAL-OXIDE SEMICONDUCTOR
10 pF
TO-205AD
O-MBCY-W3
1
3
ENHANCEMENT MODE
METAL
NOT SPECIFIED
6.25 W
FET General Purpose Powers
TN0604N3-G-P005
Microchip Technology
TN0604N3-G-P005 by Microchip Technology is a N-CHANNEL FET with 40V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.7A Drain Current and 0.75ohm On Resistance. Ideal for low-power circuits requiring high efficiency and reliability.
HIGH INPUT IMPEDANCE
40 V
.7 A
.75 ohm
50 pF
TO-92
O-PBCY-T3
e3
PLASTIC/EPOXY
.74 W
MATTE TIN
THROUGH-HOLE
SWITCHING
TN0604N3-G-P013
TN0604N3-G-P013 by Microchip Technology is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it has a max drain current of 0.7A and a built-in diode. Operating in enhancement mode, it can handle up to 0.74W power dissipation at temperatures ranging from -55°C to 150°C.
TN0620N3-G-P014
Microchip TN0620N3-G-P014 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 1W power dissipation, and -55 to 150°C operating temperature range. Its cylindrical package makes it suitable for through-hole mounting.
200 V
.25 A
6 ohm
35 pF
1 W
VP0550N3-G-P013
VP0550N3-G-P013 by Microchip Technology is a P-CHANNEL FET with 500V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.054A ID and 125Ω RDS(on). The transistor has a built-in diode, operates in ENHANCEMENT MODE, and has 10pF Crss.
500 V
.054 A
125 ohm
P-CHANNEL
5LN01SP-AC
Onsemi
5LN01SP-AC by Onsemi is a N-CHANNEL FET with max drain current of 0.1A and power dissipation of 0.25W. Ideal for applications requiring single configuration, it operates at up to 150°C making it suitable for various electronic devices.
SINGLE
.1 A
e2
.25 W
FET General Purpose Power
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
BS107PSTOA
Zetex Plc
BS107PSTOA by Zetex Plc is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 0.12A and 23 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. The transistor's PLASTIC/EPOXY body, RECTANGULAR shape, and WIRE terminals make it suitable for various electronic designs.
.12 A
23 ohm
R-PSIP-W3
200 Cel
RECTANGULAR
IN-LINE
260
Not Qualified
10
BS107PSTOB
BS107PSTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. With 200V DS Breakdown Voltage, it has 23 ohm Drain-Source On Resistance and 0.12A Drain Current. Its PLASTIC/EPOXY body, ENHANCEMENT MODE operation, and SILICON material make it ideal for various electronic circuits.
ZVNL120ASTOB
ZVNL120ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 200V DS Breakdown Voltage, 0.18A ID, and 10Ω RDS(on). With SILICON element material and ENHANCEMENT MODE operation, it operates up to 200°C making it suitable for various electronic circuits.
.18 A
10 ohm
ZVN4424ASTOA
ZVN4424ASTOA by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A Drain Current, and 6ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR tech.
240 V
.26 A
ZVN4424ASTOB
ZVN4424ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A ID, and 6Ω Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR technology.
ZVN0545ASTOB
ZVN0545ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 450V DS Breakdown Voltage, 50Ω Drain-Source On Resistance, and 0.09A Max Drain Current. Ideal for high voltage switching circuits due to its ENHANCEMENT MODE operation and SILICON material.
450 V
.09 A
50 ohm
ZVN4206ASTOA
Zetex Plc's ZVN4206ASTOA is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. Featuring SINGLE configuration, it has 0.6A ID and 1.5 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. Package style: IN-LINE, terminal finish: MATTE TIN, making it suitable for various electronic designs.
.6 A
1.5 ohm
ZVN4206ASTOB
Zetex Plc's ZVN4206ASTOB is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Featuring single configuration, 0.6A ID, and 1.5Ω RDS(on), it operates in enhancement mode up to 200°C. Its rectangular package with wire terminals makes it suitable for various electronic devices.
ZVP2110ASTOA
ZVP2110ASTOA by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.23A ID, and 8Ω RDS(ON). With ENHANCEMENT MODE operation and SILICON material, it operates up to 200°C making it ideal for various electronic circuits.
100 V
.23 A
8 ohm
ZVP2110ASTOB
ZVP2110ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 8Ω Drain-Source Resistance, and 0.23A Drain Current. With SILICON element material and ENHANCEMENT MODE operation, it's ideal for various electronic circuits.
ZVP4424ASTOB
ZVP4424ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 15 ohm Drain-Source Resistance, and 0.2A Drain Current. With ENHANCEMENT MODE operation and SILICON material, it operates at up to 200°C.
.2 A
15 ohm
ZVP3306ASTOB
ZVP3306ASTOB by Zetex Plc is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 14 ohm Drain-Source On Resistance, 0.16A Drain Current, and operates at up to 200°C. The transistor has a RECTANGULAR shape, WIRE terminals, and uses METAL-OXIDE SEMICONDUCTOR technology.
.16 A
14 ohm
ZVP3306ASTZ
ZVP3306ASTZ by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 14 ohm Drain-Source On Resistance, and 0.16A Drain Current. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it's ideal for various electronic circuits requiring efficient switching capabilities.
ZVP2106ASTOB
ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.
.28 A
5 ohm
2SJ598-AY
Renesas Electronics
The Renesas Electronics 2SJ598-AY is a P-CHANNEL FET with 60V DS breakdown voltage and 12A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has a max power dissipation of 23W and can withstand temperatures up to 150°C.
DRAIN
12 A
.19 ohm
TO-251
R-PSIP-T3
23 W
Other Transistors
PN4303/D26Z
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: AMPLIFIER; Terminal Form: THROUGH-HOLE;
2N5457/D26Z
2N5457/D26Z by National Semiconductor is a N-CHANNEL DEPLETION MODE FET with PLASTIC/EPOXY package. It has a max feedback capacitance of 3 pF and is commonly used for SWITCHING applications.
2N5457/D27Z
2N5457/D27Z by National Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has 3 terminals, PLASTIC/EPOXY body, and 3 pF Crss. Ideal for SWITCHING applications due to its JUNCTION technology and SINGLE configuration in a CYLINDRICAL package.
458
Nte Electronics
Nte Electronics 458 is a N-CHANNEL FET with DEPLETION MODE operation. It features PLASTIC/EPOXY body, SILICON element, and WIRE terminals in a CYLINDRICAL package. Ideal for low-power applications requiring high-frequency switching capabilities.
LOW NOISE
O-PBCY-W3
466
Nte Electronics 466 is a N-CHANNEL FET with METAL body, ideal for SWITCHING applications. Features DEPLETION MODE operation and SILICON element material. Offers low 18 ohm Drain-Source On Resistance in a CYLINDRICAL package with WIRE terminals.
18 ohm
TO-18
NDDP010N25AZ-1H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Case Connection: DRAIN; Package Shape: RECTANGULAR;
250 V
10 A
.42 ohm
e6
52 W
TIN BISMUTH
SFT1452-W
The Onsemi SFT1452-W is a N-CHANNEL FET with 3A max drain current and 26W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, using METAL-OXIDE SEMICONDUCTOR technology.
3 A
26 W
Tin/Bismuth (Sn/Bi)
STP60NH2LL
STMicroelectronics
STP60NH2LL by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it has 0.0135 ohm On Resistance and operates at up to 150 °C.
LOW THRESHOLD
24 V
40 A
.0135 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
245
60 W
40
2N4392-E3
2N4392-E3 by Vishay Intertechnology is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 1.8W and drain-source on resistance of 60 ohm. Ideal for SWITCHING applications due to its low feedback capacitance of 3.5pF and temperature range from -55°C to 200°C.
LOW INSERTION LOSS
GATE
60 ohm
3.5 pF
TO-206AA
1.8 W
Matte Tin (Sn)
30
2N5457_D74Z
Fairchild Semiconductor
2N5457_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.31W and a max operating temperature of 150°C. Ideal for SWITCHING applications due to its low feedback capacitance of 3pF.
.31 W
2N4117A-E3
Vishay Intertechnology's 2N4117A-E3 is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.3W and feedback capacitance of 1.5pF, making it ideal for AMPLIFIER applications. The transistor features a METAL package body, ROUND shape, and WIRE terminals for efficient performance up to 175°C.
1.5 pF
TO-206AF
O-MBCY-W4
4
175 Cel
.3 W
2N4393-E3
2N4393-E3 by Vishay Intertechnology is a N-CHANNEL FET with 1.8W power dissipation, -55 to 200 °C operating temp range, and 100 ohm max drain-source resistance. Ideal for switching applications due to its DEPLETION MODE operation and low feedback capacitance of 3.5 pF.
100 ohm
2N6661JTXL02
Vishay Intertechnology's 2N6661JTXL02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A ID, and 4Ω RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package style is CYLINDRICAL with METAL-OXIDE SEMICONDUCTOR technology, suitable for high power dissipation up to 6.25W at 150°C.
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
90 V
.86 A
4 ohm
2N7000,126
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE
.3 A
TIN
BS108,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CYLINDRICAL;
15 pF
.35 W
BSN254,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; JESD-609 Code: e3; Maximum Drain Current (ID): .3 A;
7 ohm
BSN254A,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
BSN304,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Package Style (Meter): CYLINDRICAL; JESD-609 Code: e3;
300 V
BSP254A,126
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Terminal Position: BOTTOM;
NOT APPLICABLE
BSP304A,126
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): .17 A; Minimum DS Breakdown Voltage: 300 V;
.17 A
17 ohm
BST72A,112
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-92; Terminal Position: BOTTOM;
.19 A
.83 W
J109,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; No. of Elements: 1;
25 V
12 ohm
.4 W
J112,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Maximum Drain-Source On Resistance: 50 ohm;
J113,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 100 ohm; JESD-30 Code: O-PBCY-T3;
J175,116
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): CYLINDRICAL; Field Effect Transistor Technology: JUNCTION;
30 V
J176,126
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Minimum DS Breakdown Voltage: 30 V;
250 ohm
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