Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MMBTA92-7
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
.5 A
300 V
SINGLE
25
R-PDSO-G3
e0
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
PNP
.3 W
Not Qualified
Other Transistors
YES
TIN LEAD
GULL WING
DUAL
SWITCHING
SILICON
50 MHz
MMBT6521LT1
Onsemi
MMBT6521LT1 by Onsemi is a NPN BJT transistor with 300 min hFE, 0.3W power dissipation, and 25V collector-emitter voltage. Ideal for amplifier applications, it features a small outline package style and Gull Wing terminals for surface mount assembly. Operating at up to 150 °C, it offers reliable performance in various electronic circuits.
.1 A
25 V
300
TO-236AB
235
NPN
Tin/Lead (Sn/Pb)
30
AMPLIFIER
DIMD10A-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO 100
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
100
R-PDSO-G6
e3
2
6
260
NPN AND PNP
BIP General Purpose Small Signal
MATTE TIN
250 MHz
BC858A-7-F
Diodes Inc. BC858A-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 125. Ideal for switching applications, it operates at up to 150°C, with VCE of 30V and IC of 0.1A. Package style is small outline SMT with matte tin finish in gull wing shape.
30 V
125
200 MHz
IMX8-7-F
Diodes Inc.'s IMX8-7-F is a NPN BJT with 2 elements, hFE of 180, and VCE of 120V. Ideal for small signal applications, it has a max power dissipation of 0.3W and transition frequency of 140MHz. With Gull Wing terminals and matte tin finish, it operates up to 150°C in a small outline package.
.05 A
120 V
SEPARATE, 2 ELEMENTS
180
140 MHz
MMBT123S-7-F
Diodes Incorporated MMBT123S-7-F is a NPN BJT transistor with 150 min hFE, 18V VCEO, and 1A IC. Ideal for switching applications, it has a max power dissipation of 0.3W in a small outline package suitable for surface mount technology.
1 A
18 V
150
100 MHz
MMBT4124-7-F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
.2 A
60
300 MHz
DCX114EK-7-F
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
BUILT IN BIAS RESISTOR RATIO IS 1
DCX114TK-7-F
BUILT IN BIAS RESISTOR
DCX114YK-7-F
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;
BUILT IN BIAS RESISTOR RATIO IS 4.7
.07 A
68
DCX123JK-7-F
BUILT IN BIAS RESISTOR RATIO IS 21.36
80
DCX143TK-7-F
DCX144EK-7-F
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;
.03 A
PZT3906T1
PZT3906T1 by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for applications requiring small outline package style, such as signal amplification in electronic circuits due to its high transition frequency of 250MHz and low turn-on time of 70ns.
COLLECTOR
40 V
TO-261AA
R-PDSO-G4
4
300 ns
70 ns
BC850CLT1G
BC850CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. It is used in small signal applications due to its low power dissipation (0.3W), high collector-emitter voltage (45V), and compact gull wing package design.
4.5 pF
45 V
420
TO-236
-55 Cel
Matte Tin (Sn) - annealed
40
.6 V
MMBT2369ALT3G
MMBT2369ALT3G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 15V, max current of 0.2A, and min DC current gain of 20. With a small outline package style, it's ideal for surface mount designs requiring fast switching speeds.
15 V
20
TIN
18 ns
12 ns
BC859CLT1G
BC859CLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 420, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.
Tin (Sn)
BC849BLT3G
BC849BLT3G by Onsemi is a NPN BJT with VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
200
BC859BLT1G
BC859BLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 220, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.
220
BC859BLT3G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BCX17LT3G
BCX17LT3G by Onsemi is a PNP BJT transistor with 45V VCEO, 0.5A IC, and 150 °C max temp. Ideal for small signal applications in electronics due to its compact SOT package and high DC current gain of 40 (hFE). Suitable for surface mount PCB designs requiring low power dissipation.
MMBTA93LT1G
MMBTA93LT1G by Onsemi is a PNP BJT transistor with 200V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its GULL WING terminals and compact SMALL OUTLINE package make it suitable for surface mount designs.
200 V
PZT3906T1G
PZT3906T1G by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for small outline packages in applications requiring a high transition frequency up to 250MHz such as signal amplification in electronic circuits.
DN0150BDJ-7
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
R-PDSO-F6
FLAT
60 MHz
DP0150ADJ-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
120
80 MHz
DP0150BDJ-7
2SD2705STP
ROHM
ROHM's 2SD2705STP is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 820, and fT of 35MHz. Ideal for amplifier applications due to its single configuration and max. collector current of 0.3A at an operating temp of up to 150°C in a cylindrical package with through-hole terminals.
.3 A
20 V
820
O-PBCY-T3
e1
ROUND
CYLINDRICAL
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
35 MHz
DVRN6056-7-F
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
.6 A
SINGLE WITH BUILT-IN DIODE
255 ns
35 ns
DTA114TXV3T1G
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
160
BC847BLD-7
Diodes Inc. BC847BLD-7 is a NPN BJT with 150 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal amplification in electronic circuits due to its 0.3W Ptot, 0.2A IC, and SOT-23 package with Gull Wing terminals. Suitable for applications requiring high gain and low power consumption in compact designs.
NSCT3904LT1G
NSCT3904LT1G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
4 pF
250 ns
.3 V
NSCT3904LT3G
NSCT3904LT3G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact small outline package style.
NSVMMBT6517LT1G
NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.
350 V
15
AEC-Q101
40 MHz
NSVBCW32LT1G
NSVBCW32LT1G by Onsemi is a NPN BJT with 32V VCEO, 0.1A IC, and hFE of 200. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150 °C max operating temp.
32 V
PUMH11/ZLF
Nexperia
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2.5 pF
-65 Cel
NOT SPECIFIED
IEC-60134
230 MHz
.15 V
ASS8050-H-HF
Comchip Technology
Comchip Technology's ASS8050-H-HF is a NPN BJT with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.
1.5 A
.5 V
AS9013-H-HF
Comchip Technology's AS9013-H-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 200, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount assembly.
150 MHz
AS9013-L-HF
Comchip Technology's AS9013-L-HF is a NPN BJT transistor with VCEsat of 0.6V, hFE of 120, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and high transition frequency of 150MHz.
AS9013-J-HF
Comchip Technology's AS9013-J-HF is a NPN BJT with VCEsat of 0.6V, hFE of 300, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 certification and 150MHz fT.
ASS8550-H-HF
Comchip Technology's ASS8550-H-HF is a PNP BJT transistor with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.
BC857BS-QF
BC857BS-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. Package style is small outline with Gull Wing terminals.
2.2 pF
AEC-Q101; IEC-60134
.4 V
MMBT6427LT3G
MMBT6427LT3G by Onsemi is a NPN Darlington transistor with max VCEsat of 1.5V, hFE of 14000, and IC of 0.5A. Ideal for small signal applications in electronics due to its high gain and low saturation voltage. Operates b/w -55 to 150 °C, making it suitable for various temperature environments.
7 pF
DARLINGTON
14000
1.5 V
PUMD3-QZ
PUMD3-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, hFE of 30, and can handle a max IC of 0.1A. With a package style of small outline and operating temperatures ranging from -65 to 150°C, it meets AEC-Q101 and IEC-60134 standards.
.1 V
PUMD3-QH
PUMD3-QH by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, min hFE of 30, and can operate at temperatures up to 150°C. With a package style of small outline and dual terminal position, it offers high performance in a compact design.
PBSS2515YPN-QX
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
6 pF
420 MHz
.25 V
PUMH2-QF
PUMH2-QF by Nexperia is a NPN BJT with 2 elements, built-in resistor, and 0.15V VCEsat. Ideal for switching applications, it has a max IC of 0.1A, hFE of 80, and operates b/w -65 to 150°C. With a package style of small outline and Gull Wing terminals, it offers high performance in a compact design.
BUILT-IN BIAS RESISTOR RATIO IS 1
PUMD9-QZ
PUMD9-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, min hFE of 100, and max operating temp of 150°C. With a package style of small outline and dual terminal position, it offers high performance in a compact design for various electronic circuits.
BUILT IN BIAS RESISTANCE RATIO IS 4.7
PUMH9-QH
BUILT-IN BIAS RESISTOR RATIO IS 4.7
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