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IMX8-7-F

Diodes Incorporated

IMX8-7-F by Diodes Incorporated

Diodes Inc.'s IMX8-7-F is a NPN BJT with 2 elements, hFE of 180, and VCE of 120V. Ideal for small signal applications, it has a max power dissipation of 0.3W and transition frequency of 140MHz. With Gull Wing terminals and matte tin finish, it operates up to 150°C in a small outline package.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$0.100

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Vyrian

USA . 6,336 parts In-Stock

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6,336

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,853 parts In-Stock

1+ parts

$0.100

100+ parts

-

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$0.098

6,853

$0.100

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-

$0.098

Argo Parts USA

USA . 3,046 parts In-Stock

1+ parts

$0.100

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$0.097

3,046

$0.100

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$0.097

Aztec Data Supply Inc.

USA . 5,713 parts In-Stock

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$1.620

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5,713

$1.620

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Corohmni

South Africa . 6 parts In-Stock

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$1.806

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6

$1.806

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$2.276

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$2.071

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$1.866

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-

300

$2.276

$2.071

$1.866

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Semicontronic

India . 1,244 parts In-Stock

1+ parts

$3.050

100+ parts

$2.974

1k+ parts

$2.958

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1,244

$3.050

$2.974

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AZTECH Wire

Italy . 564 parts In-Stock

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$14.764

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Ampacity Inc.

Singapore . 772 parts In-Stock

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$24.050

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Perfect Parts

USA . 122,133 parts In-Stock

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,856 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Lixinc

USA . 2,690 parts In-Stock

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2,690

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Netroflash

USA . 50 parts In-Stock

1+ parts

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100+ parts

$0.098

1k+ parts

$0.095

10k+ parts

$0.093

50

-

$0.098

$0.095

$0.093

Overview

Experience the superior quality and reliability of Diodes Incorporated with the IMX8-7-F, a high-performance Small Signal Bipolar Junction Transistor for your electronic applications. This NPN transistor offers separate configuration with 2 elements in a compact, surface-mount package, making it ideal for space-constrained designs. With a minimum DC current gain of 180 and a maximum collector-emitter voltage of 120V, this transistor ensures efficient operation at temperatures up to 150°C. Trust Diodes Incorporated to deliver cutting-edge technology and unmatched value to meet all your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Commonly used configuration for general purpose amplification and switching applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving space and reducing overall product size.

Maximum Operating Temperature: 150 °C

Ensures reliable performance under normal operating conditions.

Maximum Collector-Emitter Voltage: 120 V

Suitable for applications requiring higher voltage handling capabilities.

Minimum DC Current Gain (hFE): 180

Indicates high current amplification ability, making it suitable for various signal amplification purposes.

Nominal Transition Frequency (fT): 140 MHz

Indicates high-speed switching capabilities, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) IMX8-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

IMX8-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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