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IMX8T108

ROHM

IMX8T108 by ROHM

ROHM's IMX8T108 is a NPN BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.5V, hFE of 180, and max operating temp of 150°C. With a package style of small outline and peak reflow temp at 260°C, it offers high performance in a compact design.

Median Price

$0.136

Lifecycle Status

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16

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1k+

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Verical

USA . 24,000 parts In-Stock

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$0.103

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Chip1Stop

Japan . 1,200 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$0.121

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NAC Semi

USA . 33,000 parts In-Stock

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Rutronik

Germany . 18,000 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

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ACDS - Activité Composants Distribution Service

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Manoshevitz Elec. Sales

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.088

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

USA . 2,900 parts In-Stock

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Bristol Electronics

USA . 2,865 parts In-Stock

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Sea View Technologies

USA . 1,300 parts In-Stock

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MISTER SPROCKETS

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Semicontronic

India . 3,878 parts In-Stock

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$0.069

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$0.067

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$0.067

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Ampacity Inc.

Singapore . 3,824 parts In-Stock

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Argo Parts USA

USA . 4,499 parts In-Stock

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Continental Prestige Electronics

USA . 600 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 57 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,357 parts In-Stock

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Corohmni

South Africa . 13 parts In-Stock

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Advanced Electronics

New Zealand . 132 parts In-Stock

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Perfect Parts

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iodParts Technologies Inc.

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Kepictronics

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Robosynatics

Brazil . 300 parts In-Stock

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Lucentia Tech

USA . 300 parts In-Stock

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$3.344

Overview

Elevate your electronic designs with the high-quality IMX8T108 from ROHM. As a leading manufacturer in the industry, ROHM delivers exceptional performance and reliability in their Small Signal Bipolar Junction Transistors (BJT). With applications in amplifiers, this NPN transistor offers a maximum VCEsat of 0.5V and a minimum DC current gain of 180, ensuring optimal functionality. The IMX8T108's compact design and maximum power dissipation of 0.3W make it ideal for various projects. Experience the value and benefits that ROHM's IMX8T108 brings to your electronic creations today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits and allows for easy integration with existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, making it a reliable choice for audio and signal processing applications.

Maximum VCEsat: 0.5 V

Low saturation voltage helps minimize power loss and improve efficiency of the amplifier circuit.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures stable and consistent amplification performance.

Maximum Collector-Emitter Voltage: 120 V

Suitable for high voltage applications, providing flexibility and versatility in circuit design.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate current levels, making it suitable for various amplification tasks.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) IMX8T108 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

IMX8T108 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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